"‰½ •Ά““,΄“c “NŽi,“y‹ Œͺ‘Ύ,’†”φ —T—˜,¬ŠΦ ’qŒυ,“ΰ‹L ˆκG,Li Kangbai,‘εŒ© rˆκ˜Y,Τ’Λ —m","ƒgƒ‚ƒOƒ‰ƒtƒB[”­Œυ•ͺŒυ–@‚Ι‚ζ‚ιŒΈˆ³Ž_‘fICP‚Μ‹σŠΤ•ͺ‰πŒv‘ͺ","‘ζ86‰ρ‰ž—p•¨—Šw‰οH‹GŠwpu‰‰‰ο","‘ζ86‰ρ‰ž—p•¨—Šw‰οH‹GŠwpu‰‰‰ο u‰‰—\eW","Œφ‰vŽΠ’c–@l ‰ž—p•¨—Šw‰ο",,,"  08-111",2025,Aug.
"Shun-Ishiro Ohmi,Makoto Yoshihara,Takeo Okamoto,EISUKE TOKUMITSU,HIROSHI ISHIWARA","Electrical Properties of Ferroelectric Gate HEMT Structures (‹€’˜)",,"Japanese Journal of Applied Physics",,"Vol. 35","No. 2B","pp. 1254-1257",1996,Feb.