"Jinwang Li,Hirokazu Tsukada,Takaaki Miyasako,Phan Trong Tue,Kazuhiro Akiyama,Hiromi Nakazawa,Yuzuru Takamura,Tadaoki Mitani,Tatsuya Shimoda","High-transconductance indium oxide transistors with a lanthanum-zirconium gate oxide characteristic of an electrolyte",,"Journal of Applied Physics","American Institute of Physics","Vol. 127",,"p. 064524",2020,Feb.
"Phan Trong Tue,Takaaki Miyasako,Bui Nzuyen Quoc Trinh,Jinwang Li,Eisuke Tokumitsu,Tatsuya Shimoda","OPTIMIZATION OF Pt AND PZT FILMS FOR FERROELECTRIC-GATE THIN FILM TRANSISTORS","12th Inter. Meeting on Ferroelectricity & 18th IEEE Intern.Symposium on the Applications of Ferroelectrics (IMF-IASF-2009)",,,,,,2009,Aug.
"Eisuke Tokumitsu,Takaaki Miyasako,Masaru Senoo","Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures",,"2005 Mater. Res. Soc. Symp. Proc.",,"Vol. 830",,"pp. 107-112",2005,July
"Eisuke Tokumitsu,Masaru Senoo,Takaaki Miyasako","Use of ferroelectric gate insulator for thin film transistors with ITO channel",,"Journal of Microelectronic Engineering",,"vol. 80",,"pp. 305-308",2005,June
"E.Tokumitsu,M. Senoo,T. Miyasako","Use of ferroelectric gate insulator for thin film transistors with ITO channel",,"Journal of Microelectronic Engineering",,"vol. 80",,"pp. 305-308",2005,June
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with oarge charge controllability",,"Applied Physics Letters",,"vol. 86","No. 16","pp. 162902/1-3",2005,Apr.
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Ferroelectric-gate thin?film transistors using indium-tin-oxide channel with large charge controllability",,"Applied Physics Letters",,"vol. 86","No. 16","pp. 162902-1?3",2005,Apr.
"Eisuke Tokumitsu,Takaaki Miyasako,Masaru Senoo","Impact of low pressure consolidation annealing on electrical properties of sol-gel derived Pb(Zr,Ti)O3 films",,"Journal of the European Ceramic Society",,"Vol. 25",,"pp. 2277-2280",2005,Jan.
"Takaaki Miyasako,Masaru Senoo,Eisuke Tokumitsu","Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process",,"IEICE Transactions on Electronics",,"Vol. E87-C","No. 10","pp. 1694-1699",2004,Oct.