"Eisuke Tokumitsu,Isahaya Yamamura,Shiro Hino,Naruhisa Miura,Masayuki Imaizumi,Hiroaki Sumitani,Tatsuo Oomori","Comparative Study of Metalorganic Chemical Vapour Deposition of HfO2 and Al2O3 Gate Insulators on SiC for Power MOSFET Applications","WoDiM 2012(17th Workshop on Dielectrics in  Microelectronics)",,,,,,2012,June
"Eisuke Tokumitsu,Akio Ishiguro,Hiroyuki Yamada,Shiro Hino,Naruhisa Miura,Masayuki Imaizumi,Hiroaki Sumitani,Tatsuo Oomori","Al2O3/4H-SiC MOSFETs Fabricated with High-Temperature Nitridation Process","2011 International Conference on Silicon Carbide and Related Materials (ICSCRM 2011)",,,,,"pp. 320",2011,Sept.
"山村勇速,徳光永輔,日野史郎,三浦 成久,大森 達夫","MOCVD法によるSiC上へのHfO2膜の堆積とHfO2/SiO2/4H-SiC MOSFETの作製","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"石黒暁夫,山田泰之,日野史郎,三浦 成久,大森 達夫,徳光永輔","高温窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価","第58回応用物理学関係連合講演会",,,,,,2011,Mar.
"石黒暁夫,山田泰之,日野史郎,三浦 成久,大森 達夫,徳光永輔","高温窒化処理とAl2O3堆積膜を用いた４H-SiC MOSFETの作製と評価","SiC及び関連ワイドギャップ半導体研究会 第１９回講演会",,,,,,2010,Oct.
"竹崎慶太郎,日野史郎,三浦 成久,大森 達夫,徳光永輔","窒化処理とAl2O3堆積膜を用いた4H-SiC MOSFETの作製と評価","SiC及び関連ワイドギャップ半導体研究会第１８回講演会",,,,,,2009,Dec.
"竹崎慶太郎,日野史郎,三浦成久,大森達夫,徳光永輔","窒化処理とAL2O3堆積膜を用いた4H-SiC MOSFETの作製と評価","第70回 応用物理学会学術講演会","第70回 応用物理学会学術講演会",,,"  10p-M-21",,2009,Sept.
"Shiro Hino,Tomohiro Hatayama,Jun Kato,Naruhisa Miura,Tatsuo Oomori,Eisuke Tokumitsu","Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure","ICSCRM2007","Materials Science Forum",,"vol. 600-603",,"pp. 683-686",2009,Feb.
"H.Moriya,S.Hino,N.Miura,T.Oomori,E.Tokumitsu","Effect of Oxidant in MOCVD-growth of Al2O3 Gate Insurator on 4H-SiC MOSFET Properties","7th European Conference on Silicon Carbide and Related Materials (ECSCRM 2008)",,,,,,2008,Sept.
"Tomohiro Hatayama,Shiro Hino,Naruhisa Miura,Tatsuo Oomori,Eisuke Tokumitsu","Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO2 Layer Between Al2O3 and SiC",,"IEEE Transactions on Electron Devices",,"Vol. 55","No. 8","pp. 2041-2045",2008,Aug.
"S.Hino,Tomohiro Hatayama,J.Kato,E.Tokumitsu,N.Miura,T.Oomori","High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator",,"Applied Physics Letters",,"Vol. 92","No. 183503","pp. 1-2",2008,June
"Shiro Hino,Tomohiro Hatayama,Naruhisa Miura,Tatsuo Oomori,Eisuke Tokumitsu","Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al2O3 Gate Insulator",,"Materials Science Forum",,"Vol. 556-557",,"pp. 787-790",2007,Oct.
"S.Hino,Tomohiro Hatayama,J.Kato,N. Miura,T.Oomori,E.Tokumitsu","Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure","International Conference on Silicon Barbide and Related Materials 2007",,,,"No. We-2A-2",,2007,Oct.
"加藤潤,日野史郎,三浦 成久,大森 達夫,徳光永輔","低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化","第６８回 応用物理学関係連合講演会","第６８回 応用物理学関係連合講演会",,,"No. 6p-ZN-10/I",,2007,Sept.
"日野史郎,畑山 智裕,加藤潤,守谷仁,三浦 成久,大森 達夫,徳光永輔","極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（?）","第６８回 応用物理学会学術講演会","第６８回 応用物理学会学術講演会",,,"No. 6p-ZN-9/?",,2007,Sept.
"日野史郎,畑山 智裕,加藤潤,徳光永輔,三浦 成久,大森 達夫","Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性","第54回応用物理学関係連合講演会",,,,"No. 29a-N-4",,2007,Mar.
"畑山 智裕,日野史郎,加藤潤,徳光永輔,三浦 成久,大森 達夫","極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上","第54回応用物理学関係連合講演会",,,,"No. 29a-N-3",,2007,Mar.
"日野史郎,畑山智裕,徳光永輔,三浦成久,大森達夫","MOCVD法により形成したAl2O3薄膜をゲート絶縁膜とする4H-SiC MOS-FETの作製と評価","第67回応用物理学会学術講演会","第67回応用物理学会学術講演会",,,"No. 31a-ZG-10",,2006,Aug.
"日野史郎,畑山智裕,徳光永輔,三浦成久,大森達夫","MOCVD法による堆積膜／SiCの作製と評価","信学技報, 応用物理学会分科会シリコンテクノロジー, IEICE Technical Report、SDM2006-42",,,"Vol. 106","No. 108","pp. 1-5",2006,June