"Gwang-Geun Lee,Eisuke Tokumitsu,Sung-Min Yoon,Yosihisa Fujisaki,Joo-Won Yoon,Hiroshi Ishiwara","The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Letters",,"Vol. 99",,"pp. 012901-1-3",2011,July
"G.-G. Lee,S.-M. Yoon,J.-W. Yoon,Y. Fujisaki,H. Ishiwara,E. Tokumitsu","Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)","The 17th International Display Workshops(IDWf10)",,,,,,2010,Dec.
"GwangGeun Lee,Sung-ming Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs","2010 fall meeting, Materials Research Society",,,,,,2010,Nov.
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer","‘ζ‚V‚P‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2010,Sept.
"Sung-Min Yoon,Shin-Hyuk Yang,Soon-Won Jung,Chun-Won Byun,Sang-Hee Ko Park,Chi-Sun Hwang,Gwang-Geun Lee,Eisuke Tokumitsu,Hiroshi Ishiwara","Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor",,"Applied Physics Letters",,,"No. 96","  232903 1-3",2010,May
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,“‘θ–F‹v,ΞŒ΄G,“ΏŒυ‰i•γ","—L‹@‹­—U“d‘ΜP(VDF-TrFE)‚Ζ–³‹@Ž_‰»•¨”Ό“±‘ΜIGZO‚π—p‚’‚½‹­—U“d‘ΜƒQ[ƒg”––Œƒgƒ‰ƒ“ƒWƒXƒ^‚̍쐻‚Ζ•]‰Ώ",,"MŠw‹Z•ρASDM2010-16AOME2010-16(2010-04)","ŽΠ’c–@l“dŽqξ•ρ’ʐMŠw‰ο","Vol. 110","No. 15","pp. 71-75",2010,Apr.
"GwangGeun Lee,Sung-ming Yoon,JooWon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film","2009 fall meeting, Materials Research Society",,,,,,2009,Nov.
"E.Tokumitsu,N.Kawaguchi,S.M.Yoon","Flexible Logic-Gate Using Ferroelectric Films",,"2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices, Cheju, Korea",,,,"pp. 223-228",2001,July
"E.Tokumitsu,N.Kawaguchi,S.M.Yoon","Switchable NAND/NOR Logic-Gate Using Ferroelectric Control Capacitor",,"Ext. Abst. 20th Electronic Materials Symp., Nara, Japan",,,,"pp. 41-42",2001,June
"Sung-ming Yoon,Eisuke Tokumitsu,Hiroshi Ishiwara","Ferroelectric Neuron Integrated Circuits using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>-Gate FET's and CMOS Schmitt-Trigger Oscillators",,"IEEE Transactions on Electron Devices",,"Vol. 47","No. 8","pp. 1630-1635",2000,Aug.
"Sung-ming YOON,Eisuke TOKUMITSU,Hiroshi ISHIWARA","Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/ SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Pt/Ti/SiO<sub>2</sub>/Si Structure-Field Effect Transistor as a Synapse Device",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 4B","pp. 2119-2124",2000,Apr.
"Sung-ming Yoon,Eisuke Tokumitsu,Hiroshi Ishiwara","Adaptive-Learning Neuron Integrated Circuits Using Metal-Ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)-Semiconductor (MFS) FETs",,"IEEE Electron Device Letters",,"Vol. 20","No. 10","pp. 526-528",1999,Oct.
"Sung-ming Yoon,Eisuke Tokumitsu,Hiroshi Ishiwara","An electrically modifiable synapse arrary composed of metal-ferroelectric-semiconductor (MFS) FETs using SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films",,"IEEE Electron Device Lett.",,"Vol. 20","No. 5","pp. 229-231",1999,May
"Sung-ming YOON,Eisuke TOKUMITSU,Hiroshi ISHIWARA","Realization of adaptive learning function in a neuron circuit using metal/ferroelectric (SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>)/semiconductor field effect transisitor (MFSFET)",,"Jpn. J. Appl. Phys.",,"Vol. 38-1","No. 4B","pp. 2289-2293",1999,Jan.
"Sung-ming YOON,Yuji KURITA,Eisuke TOKUMITSU,Hiroshi ISHIWARA","Electrical Characteristics of Neuron Oscillation Circuits Composed of MOSFETs and Complementary Unijunction Transistors",,"Japanese Journal Applied Physics",,"Vol. 37","No. 3B","pp. 1110-1115",1998,Mar.