"M. S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Electrical and Memory Window Properties of Sr<sub>0.8-x</sub>Ba<sub>x</sub>Bi<sub>2.2</sub>Ta<sub>2-y</sub>Zr<sub>y</sub>O<sub>9</sub> Ferroelectric Gate in Metal-Ferroelectric-Insulator-Semiconductor Structure",,"Journal of Electroceramics",,"Vol. 28","No. 2-3","pp. 158-164",2012,Mar.
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates",,"Microelectronic Engineering",,"Vol. 87","No. 11","pp. 2173-2177",2010,July
"Mehmet S. Bozgeyik,Jeffrey S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"pp. 061403-6",2009,June
"Mehmet S. Bozgeyik,J.S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr doping in Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> thin films",,"Materials Science and Engineering B",,"Vol. 161",,"pp. 130-133",2009,June
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Ferroelectric and Electrical Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1071",,"pp. 207-212",2008,June
"Mehmet S. Bozgeyik,J. S. Cross,H. Ishiwara,K. Shinozaki","Effect of Ba and Zr Doping in Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)","The 2nd International Conference on Science and Technology for Advanced Ceramics (STAC2)",,,"No. PC07",,2008,May
"Mehmet Sait Bozgeyik,Jeffery S. Cross,Hiroshi Ishiwara,Kazuo Shinozaki","Ferroelectric and Electrical Properties of BaZrO<sub>3</sub> Doped Sr<sub>0.8</sub>Bi<sub>2.2</sub>Ta<sub>2</sub>O<sub>9</sub> Thin Films","MRS Spring Meeting","MRS Spring Meeting",,,"  F3.9",,2008,Mar.