"Maiko Ariga,Masakazu Arai,Takeo Kageyama,C. Setiagung,Yoshihiko Ikenaga,N. Iwai,Hitoshi Shimizu,K. Nishikawa,Akihiko Kasukawa,Fumio Koyama","Noise Characteristics of GaInNAsSb 1300-nm-Range VCSEL with Optical Feedback for Isolator-Free Module",,"IEEE J. Select. Top. Quantum Electron.",,"vol. 11","no. 5","pp. 1074-1078",2005,Sept.
"Takashi Kondo,Masakazu Arai,Tomoyuki Miyamoto,Fumio Koyama","Isolator-free, uncooled operation of highly strained 1.1 μm GaInAs/GaAs vertical cavity surface emitting laser for 10 Gb/s single mode fiber data transmission","Conference on Optical Fiber Communications, OFC2004",,,,,,2004,Feb.
"Satoshi Shinada,Fumio Koyama,Nobuhiko Nishiyama,Masakazu Arai","Single high-order transverse mode surface emitting laser with micromachined surface relief","IEICE","Trans. IEICE",,"vol. E85-C","no. 4","pp. 995-1000",2002,
"近藤崇,荒井昌和,宮本智之,西山伸彦,川口真生,小山二三夫,伊賀健一","1.2µm帯高歪GaInAs/GaAs量子井戸面発光レーザの発振特性","第62回応用物理学会学術講演会",,,,,,2001,Sept.
"Masakazu Arai,Nobuhiko Nishiyama,Munechika Azuchi,Akihiro Matsutani,Fumio Koyama,Kenichi Iga","Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B",,"Jpn. J. Appl. Phys",,"Vol. 40","No. 6A","pp. 4056-4057",2001,June
"Nobuhiko Nishiyama,Masakazu Arai,Satoshi Shinada,Munechika Azuchi,Akihiro Matsutani,Tomoyuki Miyamoto,Fumio Koyama,Kenichi Iga","1.12μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 40","no. 5A","pp. L437-L439",2001,May
"牧野茂樹,宮本智之,影山健生,池永賀彦,荒井昌和,小山二三夫,伊賀健一","CBE法による1.3 μm GaInNAs量子井戸レーザの熱アニールによる特性改善","第48回応用物理学関連連合講演会",,,,,,2001,Mar.
"Masakazu Arai,Nobuhiko Nishiyama,Munechika Azuchi,Akihiro Matsutani,Fumio Koyama,Kenichi Iga","Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B",,"Jpn. J. Appl. Phys.",,"Vol. 40","No. 6A","pp. 4056-4057",2001,
"Satoshi Shinada,Nobuhiko Nishiyama,Masakazu Arai,Fumio Koyama","Far field pattern control of single high order transverse mode VCSEL with micromachined surface relief","IEEE Lasers and Electro-Optics Society 2001 Annual Meeting","IEEE Lasers and Electro-Optics Society 2001 Annual Meeting",,," WU 3",,2001,
"Nobuhiko Nishiyama,Masakazu Arai,Satoshi Shinada,Tomoyuki Miyamoto,Fumio Koyama,Kenichi Iga","Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD",,"J. Crystal Growth",,"vol. 221",,"pp. 530-534",2000,Dec.
"Nobuhiko Nishiyama,Masakazu Arai,Satoshi Shinada,Tomoyuki Miyamoto,Fumio Koyama,Kenichi Iga","1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T0=210 K)",,"Jpn. J. Appl. Phys.",,"vol. 39","no. 10B","pp. L1046-L1047",2000,Oct.
"Shunichi Sato,Nobuhiko Nishiyama,Tomoyuki Miyamoto,Takashi Takahashi,Naoto Jikutani,Masakazu Arai,Akihiro Matsutani,Fumio Koyama,Kenichi Iga","Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition",,"Electron. Lett.",,"vol. 36","no. 24","pp. 2018-2019",2000,Oct.
"Masakazu Arai,Nobuhiko Nishiyama,Satoshi Shinada,Akihiro Matsutani,Fumio Koyama,Kenichi Iga","Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 8B","pp. L858-L860",2000,Aug.
"Masakazu Arai,Nobuhiko Nishiyama,Satoshi Shinada,Akihiro Matsutani,Fumio Koyama,Kenichi Iga","Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 6B","pp. L588-L590",2000,June
"Masakazu Arai,Nobuhiko Nishiyama,Satoshi Shinada,Fumio Koyama,Kenichi Iga","AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 6A","pp. 3468-3469",2000,June
"Nobuhiko Nishiyama,Masakazu Arai,Satoshi Shinada,Koichi Suzuki,Fumio Koyama,Kenichi Iga","Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers",,"IEEE Photon. Technol. Lett.",,"Vol. 12","No. 6","pp. 606-608",2000,June
"Fumio Koyama,Takeru Amano,Noriyoshi Furukawa,Nobuhiko Nishiyama,Masakazu Arai,Kenichi Iga","Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 3B","pp. 1542-1545",2000,Mar.
"Satoshi Shinada,Fumio Koyama,Nobuhiko Nishiyama,Masakazu Arai,Akihiro Matsutani,Kenya Goto,Kenichi Iga","Optical near field by vertical cavity surface emitting laser",,"Trans. IEICE",,"Vol. J83-C","No. 9","pp. 826-833",2000,
"Satoshi SHINADA,Fumio KOYAMA,Nobuhiko NISHIYAMA,Masakazu ARAI,Kenya GOTO,Kenichi IGA","Fabrication of micro-aperture surface emitting laser for near field optical data storage",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 11B","pp. L198?L200",1999,Nov.
"T. Amano,F. Koyama,N. Furukawa,N. Nishiyama,M. Arai,Kenichi Iga","Micromachined GaAlAs/GaAs vertical cavity filter with adjustable temperature dependence","5th Asia Pacific Conf. on Communications and 4th Optoelectronics and Communications Conf. (APCC/OECC’99)","5th Asia Pacific Conference on Communications and 4th Optoelectronics and Communications Conference (APCC/OECC'99)",,"Vol. PD",,"pp. 19-20",1999,Oct.
"N. Furukawa,F. Koyama,N. Nishiyama,M. Arai,T. Miyamoto,K. Iga","Micromachined tunable GaAlAs/GaAs DBR for temperature insensitive vertical cavity add/drop filter","7th Microoptics Conf. , MOC’99",,,,,"pp. 70-73",1999,July
"N. Nishiyama,S. Shinada,M. Arai,F. Koyama,K. Iga","Threshold reduction of polarization controlled InGaAs/GaAs vertical-cavity surface emitting lasers on GaAs (311)B substrates","OSA Snowmass Meeting 1999",,," SMD3",,"pp. 43-45",1999,Apr.
"西山伸彦,品田聡,荒井昌和,小山二三夫,伊賀健一","偏波制御面発光レーザのためのGaAs(311)B基板上InGaAs/GaAs量子井戸成長条件の検討","第46回春季応用物理学会",,," 28a-P-8",,,1999,Mar.