"Chia-Yuan Chang,Heng-Tung Hsu,Edward Yi Chang,Hai-Dang Trinh,Yasuyuki Miyamoto","InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric",,"Electrochemical and Solid-State Letters,",,"vol. 12","no. 12","pp. H456-H459",2009,Dec.
"Chia-Yuan  Chang,Heng-Tung  Hsu,Edward Yi  Chang,YASUYUKI MIYAMOTO","InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications",,"Japanese Journal of Applied Physics",,"Volume 48","No. 4, Issue 2","  04C094 (3 pages)",2009,Apr.
"C. Y. Chang,H. T. Hsu,E. Y. Chang,C. I. Kuo,Y. Miyamoto","InAs-Channel HEMTs for Ultra- Low-Power LNA Applications","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"Chien-I  Kuo,Edward Yi  Chang,Chia-Yuan  Chang,Heng-Tung  Hsu,YASUYUKI MIYAMOTO","Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications","The 20th Indium Phosphide and Related Material Conf. (IPRM 2008)",,,,,,2008,May
"Chien-I Kuo,Heng-Tung Hsu,Edward Yi Chang,Chia-Yuan Chang,Yasuyuki Miyamoto,Suman Datta,Marko Radosavljevic,Guo-Wei Huang,Ching Ting Lee","RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology",,"IEEE Electron Device Lett.","IEEE","vol. 29","no. 4","pp. 290-293",2008,Apr.
"Chia-Yuan  Chang,Heng-Tung  Hsu,Edward Yi  Chang,Chien-I  Kuo,Suman   Datta,Marko  Radosavljevic,YASUYUKI MIYAMOTO,Guo-Wei  Huang","Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications",,"IEEE Electron Dev. Lett.",,"vol. 28","no. 10","pp. 856-858",2007,Oct.
"Chia-Yuan Chang,Edward Yi Chang,Yi-Chung Lien,Yasuyuki Miyamoto,Chien-I Kuo,Sze-Hung  Cheng,Li-Hsin  Chu","High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,","IEEE International Conference on Semiconductor Electronics",,,,,,2006,Nov.