"F. A. Fatah,Y.-C. Lin,R.-X. Liu,K.-C. Yang,T.-W. Lin,H.-T. Hsu,J.-H. Yang,Y. Miyamoto,H. Iwai,C. Hu,S. Salahuddin,E. Y. Chang","A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,",,"Applied Physics Express",,"Volume 9","  026502",,2016,Jan.
"F. A. Fatah,Y.-C. Lin,T.-Y. Lee,K.-C. Yang,R.-X. Liu,J.-R. Chan,H.-T. Hsu,Y. Miyamoto,E. Y. Chang","Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications",,"Solid State Sci. Technol",,"volume 4","  issue 12","  N157-N159",2015,Oct.
"E. Y. Chang,C.-I Kuo,H.-T. Hsu,C.-Y. Chiang,Y. Miyamoto","InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications",,"Appl. Phys. Exp.",,"vol. 6","no. 3",,2013,
"C.-H. Yu,H.-T. Hsu,C.-Y. Chiang,C.-I Kuo,Y. Miyamoto,E. Y. Chang","Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching",,"JPN. J. APPL. PHYS.",,"vol. 52","no. 2",,2013,
"F. Fatah,C.-I Kuo,H.-T. Hsu,C.-Y. Chiang,C.-Y. Hsu,Y. Miyamoto,E. Y. Chang","Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz",,"JPN. J. APPL. PHYS.",,"vol. 51","no. 11",,2012,
"Chien-I Kuo,Wee Chin Lim,Heng-Tung Hsu,Chin-Te Wang,Li-Han Hsu,Faiz Aizad,Guo-Wei Hung,Yasuyuki Miyamoto,Edward Yi Chang","Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate","2010 International Conference on Enabling Science and Nanotechnology (ESciNano)",,,,,,2010,Dec.
"C-I. Kuo,H-T. Hsu,Y-L. Chen,C-Y. Wu,E. Y. Chang,Y. Miyamoto,W-C. Tsern,K. C. Sahoo","RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1 - xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications",,"IEEE Electron Device Letters",,"vol. 31","no. 7","pp. 677-679",2010,July
"Chia-Yuan Chang,Heng-Tung Hsu,Edward Yi Chang,Hai-Dang Trinh,Yasuyuki Miyamoto","InAs-Channel Metal-Oxide-Semiconductor HEMTs  with Atomic-Layer-Deposited Al2O3 Gate Dielectric",,"Electrochemical and Solid-State Letters,",,"vol. 12","no. 12","pp. H456-H459",2009,Dec.
"Chien-I  Kuo,Heng-Tung  Hsu,Chung Li,Chien Ying  Wu,Edward Yi  Chang,YASUYUKI MIYAMOTO,Y.-L. Chen,D. Biswas","A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT","IEEE 21th Conference on Indium Phosphide and Related Materials (IPRM'09)",,,,,,2009,May
"Chia-Yuan  Chang,Heng-Tung  Hsu,Edward Yi  Chang,YASUYUKI MIYAMOTO","InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications",,"Japanese Journal of Applied Physics",,"Volume 48","No. 4, Issue 2","  04C094 (3 pages)",2009,Apr.
"Edward Yi  Chang,Chien-I  Kuo,Heng-Tung  Hsu,YASUYUKI MIYAMOTO,Chia Ta Chang,Chien Ying  Wu","Evaluation of InAs QWFET for Low Power Logic applications","Semiconductor Technologies meeting,ECS Transactions Vol. 12, 7th ISTC/CISC Emerging",,,,,,2009,Mar.
"Chien-I KUO,Heng-Tung HSU,Edward Yi CHANG,Yasuyuki MIYAMOTO,Wen-Chung TSERN","InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Ampli?er Application",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","Vol. 47","No. 9","pp. 7119?7121",2008,Sept.
"C. Y. Chang,H. T. Hsu,E. Y. Chang,C. I. Kuo,Y. Miyamoto","InAs-Channel HEMTs for Ultra- Low-Power LNA Applications","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"Chien-I  Kuo,Edward Yi  Chang,Chia-Yuan  Chang,Heng-Tung  Hsu,YASUYUKI MIYAMOTO","Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications","The 20th Indium Phosphide and Related Material Conf. (IPRM 2008)",,,,,,2008,May
"Chien-I Kuo,Heng-Tung Hsu,Edward Yi Chang,Chia-Yuan Chang,Yasuyuki Miyamoto,Suman Datta,Marko Radosavljevic,Guo-Wei Huang,Ching Ting Lee","RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology",,"IEEE Electron Device Lett.","IEEE","vol. 29","no. 4","pp. 290-293",2008,Apr.
"Chia-Yuan  Chang,Heng-Tung  Hsu,Edward Yi  Chang,Chien-I  Kuo,Suman   Datta,Marko  Radosavljevic,YASUYUKI MIYAMOTO,Guo-Wei  Huang","Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications",,"IEEE Electron Dev. Lett.",,"vol. 28","no. 10","pp. 856-858",2007,Oct.