"Hiroaki Iino,Masafumi Kunii,Jun-ichi Hanna","Device Performance of Polycrystalline Ph-BTBT-10 OFETs Solution-Processed Under a Low Voltage and Bias-Stress Conditions","2019 MRS Spring Meeting","Abstract book of 2019 MRS Spring Meeting",,,,"  EP01.02.04",2019,Apr.
"Masafumi Kunii,Hiroaki Iino,Jun-ichi Hanna","Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals",,"Applied Physics Letters","AIP Publishing","Vol. 110","No. 24","p. 243301",2017,June
"飯野 裕明,國井 正文,半那 純一","実用的な有機トランジスタ特性を示すPh-BTBT-10","第64回応用物理学会春季学術講演会","第64回応用物理学会春季学術講演会 講演予稿集","応用物理学会","Vol. 2017春",,"pp. 16p-302-8",2017,Mar.
"國井 正文,飯野 裕明,半那 純一","ボトムゲート - ボトムコンタクトPh-BTBT-10 電解効果トランジスタのバイアス-ストレス評価","第64回応用物理学会春季学術講演会","第64回応用物理学会春季学術講演会 講演予稿集","応用物理学会","Vol. 2017春",,"pp. 16a-302-11",2017,Mar.
"Hiroaki Iino,Masafumi Kunii,Jun-ichi Hanna","A New Materials Concept for High Performance Organic Thin Film Transistors","PRiME2016","Abstract of PRiME2016",,,,,2016,Oct.
"Masafumi Kunii,Hiroaki Iino,Jun-ichi Hanna","Solution-Processed, Low-Voltage Polycrystalline Organic Field-Effect Transistor Fabricated Using Highly Ordered Liquid Crystal With Low- k  Gate Dielectric",,"IEEE ELECTRON DEVICE LETTERS,",,"Vol. 37","No. 4","p. 486-488",2016,Mar.
"國井正文,飯野裕明,半那純一","低誘電率ゲート絶縁膜を用いた多結晶Ph-BTBT-10電界効果トランジスタの低電圧駆動特性","第63回応用物理学会春季学術講演会","第63回応用物理学会春季学術講演会 講演予稿集","応用物理学会","Vol. 2016春",,"pp. 21p-W521-17",2016,Mar.
"國井正文,飯野裕明,半那純一","ボトムゲート・ボトムコンタクト型Ph-BTBT-10 FET の低電圧駆動特性","第75回応用物理学会秋季学術講演会","第75回応用物理学会秋季学術講演会 講演予稿集","応用物理学会","Vol. 2014秋",,"pp. 19a-A5-7",2014,Sept.
"半那純一,國井正文","液晶性有機半導体はわが国の液晶ディスプレー産業 復活の救世主となりうるか",,"光技術コンタクト","日本オプトメカトロニクス協会","Vol. 52","No. 6",,2014,June
"Masafumi Kunii,Hiroaki Iino,Jun-ichi Hanna","Improved threshold voltage instability in organic field-effect transistors formed with SiO2 gate dielectrics thermally annealed at high temperatures","2nd International Symposium on Self-Organizing Molecular Semiconductors","Abstract of 2nd International Symposium on Self-Organizing Molecular Semiconductors",,,,"  51",2014,Feb.