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"KAZUO TSUTSUI,T Matsuda,M Watanabe,Cheng-Guo Jin,���X�ؗY��N,Bunji Mizuno,E Ikenaga,Kuniyuki KAKUSHIMA,Ahmet Parhat,T Maruizumi,Hiroshi Nohira,takeo hattori,HIROSHI IWAI","Activated Boron and its Concentration Profiles in Heavily Doped Si Studied by Soft X-ray Photoelectron Spectroscopy and Hall Measurements",,"Journal of Applied Physics",,"Vol. 104",,"  093709",2008,
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