"Y. Shiotsu,S. Yamamoto,Y. Shuto,H. Funakubo,M. K. Kurosawa,S. Sugahara","Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits",,"IEEE Trans. on Electron Devices",,"vol. 67","no. 9","pp. 3852-3860",2020,Aug. "Y. Shiotsu,S. Yamamoto,Y. Shuto,H. Funakubo,M. K. Kurosawa,S. Sugahara","Design and circuit performance of a new piezoelectronic transistor","2018 IEEE Silicon Nanoelectronics Workshop (SNW 2018)",,,,," P2-5",2018,June "‰–’×Eì,ŽR–{Cˆê˜Y,Žü“¡—I‰î,MŒE_,•àVŽÀ,›Œ´‘","V\‘¢ƒsƒGƒ]ƒGƒŒƒNƒgƒƒjƒbƒNƒgƒ‰ƒ“ƒWƒXƒ^‚ÌÝŒv‚Æ‚»‚̃fƒoƒCƒXE‰ñ˜H«”\","‘æ65‰ñ‰ž—p•¨—Šw‰ïtŠúŠwpu‰‰‰ï",,,,," 18p-G203-7",2018,Mar. "Sugahara,Y. Shuto,S. Yamamoto,H. Funakubo,M. K. Kurosawa","Piezoelectronic Transistor for Low-Voltage High-Speed Integrated Electronics","2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2017)",,,,,,2017,Oct. "–kŒ`‘åŽ÷,Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","•sŠö”­«SRAM‚̃A[ƒLƒeƒNƒ`ƒƒ‚ƃGƒlƒ‹ƒM[«”\","“dŽqî•ñ’ÊMŠw‰ïWωñ˜HŒ¤‹†‰ï","“dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñ",,"Vol. 117","No. 9","pp. 51-56",2017,Apr. "–kŒ`‘åŽ÷,Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","•sŠö”­«SRAM‚ÌÝŒv‚ƃGƒlƒ‹ƒM[«”\‚̉ðÍ","‘æ64‰ñ‰ž—p•¨—Šw‰ït‹GŠwpu‰‰‰ï",,," 16a-412-7",,,2017,Mar. "T. Akushichi,D. Kitagata,Y. Shuto,S. Sugahara","Analysis of Spin Accumulation in a Si Channel Using CoFe/MgO/Si Spin Injectors","Electron Device Technology and Manufacturing Conference",,," P-15",,,2017,Feb. "D. Kitagata,Y. Shuto,S. Yamamoto,S. Sugahara","Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology","Electron Device Technology and Manufacturing Conference",,," 4B-5",,,2017,Feb. "Y. Takamura,Y. Shuto,S. Yamamoto,H. Funakubo,M. Kurosawa,S. Nakagawa,S. Sugahara","Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM",,"Solid-State Electron.",,"vol. 128","no. Supplement C","pp. 194-199",2016,Oct. "Y. Shuto,S. Yamamoto,S. Sugahara","Energy Performance of Nonvolatile Power-Gating SRAM Using SOTB Technology","46th European Solid-State Device Conference",,,,,,2016,Sept. "Y. Shuto,S. Yamamoto,S. Sugahara","Design and Implementation of Nonvolatile Power-Gating SRAM Using SOTB Technology","International Symposium on Low Power Electronics and Design, San Francisco",,,,,,2016,Aug. "Y. Shuto,S. Yamamoto,S. Sugahara","Nonvolatile Power-gating Architecture for SRAM using SOTB Technology","016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)",,,,,,2016,June "T. Akushichi,D. Kitagata,Y. Takamura,Y. Shuto,S. Sugahara","Spin Accumulation in a Si Channel using High-Quality CoFe/MgO/Si Spin Injectors","2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)",,," P1-27",,,2016,June "D. Kitagata,T. Akushichi,Y. Takamura,Y. Shuto,S. Sugahara","Robust Design of Electric-field-assisted Nonlocal Si-MOS Spin-devices","2016 IEEE Silicon Nanoelectronics Workshop (SNW 2016)",,," P2-23",,,2016,June "Y. Shuto,S. Yamamoto,S. Sugahara","New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM","29th IEEE International Conference on Microelectronic Test Structures (ICMTS)",,," 8-1",,,2016,Mar. "Y. Takamura,Y. Shuto,S. Yamamoto,H. Funakubo,M.K. Kurosawa,S. Nakagawa,S. Sugahara","Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAMs","2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)",,,,"pp. 72-75",2016,Jan. "T. Kondo,Y. Kawame,Y. Takamura,Y. Shuto,S. Sugahara","Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices","2015 IEEE Silicon Nanoelectronics Workshop (SNW2015)",,,,,,2015,June "D. Kitagata,T. Akushichi,Y. Takamura,Y. Shuto,S. Sugahara","Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices","2015 IEEE Silicon Nanoelectronics Workshop (SNW2015)",,,,,,2015,June "T. Akushichi,Y. Takamura,Y. Shuto,S. Sugahara","Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing",,"J. Appl. Phys.","AIP Publishing LLC","Vol. 117","No. 17","pp. 17B531/1-4",2015,May "Y. Takamura,T. Akushichi,Y. Shuto,S. Sugahara","Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration",,"J. Appl. Phys.","AIP Publishing LLC","Vol. 117","No. 17","pp. 17D919/1-4",2015,Apr. "Y. Kawame,T. Akushichi,Y. Takamura,Y. Shuto,S. Sugahara","Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact",,"J. Appl. Phys.","AIP Publishing LLC","Vol. 117","No. 17","pp. 17D151/1-3",2015,Apr. "Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara","Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology","18th Design, Automation and Test in Europe (DATE15)",,,,,,2015,Mar. "ˆ«Žµ‘׎÷,?‘º—z‘¾,Žü“¡—I‰î,›Œ´‘","ƒXƒsƒ“’~σfƒoƒCƒX‚É‚¨‚¯‚é Hanle Œø‰Ê‚̉ðÍ","‘æ 19 ‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p PASPS-19",,," P-19",,,2014,Dec. "Žü“¡—I‰î,‚‹´Ž“T,ˆ«Žµ‘׎÷,?‘º—z‘¾,›Œ´‘","CoFe/TIO2/SiƒXƒsƒ“’“üŒ¹‚Ì컂ƕ]‰¿","‘æ 19 ‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p PASPS-19",,," P-18",,,2014,Dec. "ì–Ú—I,ˆ«Žµ‘׎÷,?‘º—z‘¾,Žü“¡—I‰î,›Œ´‘","(100)”zŒü‚µ‚½Co2FeSi0.5Al0.5/MgO/Siƒgƒ“ƒlƒ‹Ú‡‚Ì컂Ƃ»‚̃Xƒsƒ“’“üŒ¹‰ž—p","‘æ 19 ‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p PASPS-19",,," P-20",,,2014,Dec. "ˆ«Žµ‘׎÷,?‘º—z‘¾,Žü“¡—I‰î,›Œ´‘","‚•iŽ¿CoFe/MgO/Si‚¨‚æ‚ÑCoFe/AlOx/Siƒgƒ“ƒlƒ‹ƒRƒ“ƒ^ƒNƒg‚ð—p‚¢‚½ Siƒ`ƒƒƒlƒ‹‚ւ̃Xƒsƒ“’“ü","‘æ 19 ‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p PASPS-19",,," O-5",,,2014,Dec. "R. Nakane,Y. Shuto,H. Sukegawa,Z.C. Wen,S. Yamamoto,S. Mitani,M. Tanaka,K. Inomata,S. Sugahara","Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip",,"Solid-State Electronics","Elsevier","Vol. 102",,"pp. 52-58",2014,Dec. "?‘º—z‘¾,ˆ«Žµ‘׎÷,Žü“¡—I‰î,›Œ´‘","“dŠE—U‹N‚É‚æ‚éƒXƒsƒ““`“±‚̉Á‘¬‚ð—p‚¢‚½”ñ‹ÇŠƒXƒsƒ“ƒfƒoƒCƒX","‘æ 19 ‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p PASPS-19",,," O-6",,,2014,Dec. "Y. Kawame,T. Akushichi,Y. Shuto,Y. Takamura,S. Sugahara","Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5 /MgO/Si tunnel contact","59th Annual Magnetism & Magnetic Materials Conference",,," AH-09",,,2014,Nov. "Y. Kawame,Y. Shuto,K. Takahashi,T. Akushichi,Y. Takamura,S. Sugahara","Fabrication of a CoFe/TiO2/Si tunnel contact and its spin-injector application","59th Annual Magnetism & Magnetic Materials Conference",,," FW-15",,,2014,Nov. "Y. Takamura,T. Akushichi,Y. Shuto,S. Sugahara","Analysis and design of nonlocal spin devices with bias-induced spin-transport acceleration","59th Annual Magnetism & Magnetic Materials Conference",,," GS-07",,,2014,Nov. "T. Akushichi,Y. Takamura,Y. Shuto,S. Sugahara","Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with the high quality tunnel barriers prepared by radical-oxygen annealing","59th Annual Magnetism & Magnetic Materials Conference",,," FW-11",,,2014,Nov. "Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara","Comparative Study of Power-Gating Architectures for Nonvolatile SRAM Cells Based on Spintronics Technology","2014 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS2014)",,,,,,2014,Nov. "Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara","Near-threshold voltage operation of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture","2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2014)",,,,,,2014,Oct. "Satoshi Sugahara,Yota Takamura,Yusuke Shuto,Shuufichirou Yamamoto","Field-Effect Spin-Transistors",,"Handbook of Spintronics","Springer Netherlands",,,"pp. 1-31",2014,Oct. "Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara","0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture","2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2014)",,,,,,2014,Sept. "‚‹´Ž“T,ˆ«Žµ‘׎÷,Žü“¡—I‰î,‚‘º—z‘¾,›Œ´‘","CoFe/TiO2/Siƒgƒ“ƒlƒ‹ƒRƒ“ƒ^ƒNƒg‚Ì컂Ƃ»‚̃Xƒsƒ“’“üŒ¹‚ւ̉ž—p","‘æ38‰ñ “ú–{Ž¥‹CŠw‰ïŠwpu‰‰‰ï",,," 4aD-4",,,2014,Sept. "ì–Ú—I,ˆ«Žµ‘׎÷,Žü“¡—I‰î,‚‘º—z‘¾,›Œ´‘","B2Œ^Co2FeSi0.5Al0.5/MgO/SiƒXƒsƒ“’“üŒ¹‚Ì컂ƕ]‰¿","‘æ38‰ñ “ú–{Ž¥‹CŠw‰ïŠwpu‰‰‰ï",,," 4aD-3",,,2014,Sept. "ˆ«Žµ‘׎÷,‚‘º—z‘¾,Žü“¡—I‰î,›Œ´‘","ƒ‰ƒWƒJƒ‹Ž_‘fƒAƒj[ƒ‹‚É‚æ‚é‚•iŽ¿ƒgƒ“ƒlƒ‹á•Ç‚ð—L‚·‚éCoFe/MgO/Si‚¨‚æ‚ÑCoFe/AlOx/SiƒRƒ“ƒ^ƒNƒg‚ð—p‚¢‚½ƒXƒsƒ“’~Ï‚Ì•]‰¿","‘æ38‰ñ “ú–{Ž¥‹CŠw‰ïŠwpu‰‰‰ï",,," 4aD-2",,,2014,Sept. "‚‘º—z‘¾,ˆ«Žµ‘׎÷,Žü“¡—I‰î,›Œ´‘","3’[ŽqƒXƒsƒ“’~σfƒoƒCƒX‚É‚¨‚¯‚éHanleŒø‰ÊM†‚̉ðÍ","‘æ38‰ñ “ú–{Ž¥‹CŠw‰ïŠwpu‰‰‰ï","‘æ38‰ñ “ú–{Ž¥‹CŠw‰ïŠwpu‰‰‰ï",," 4aD-1",,,2014,Sept. "Y. Shuto,S. Yamamoto,S. Sugahara","Design and performance of nonvolatile SRAM cells based on pseudo-spin-FinFET architecture","2014 IEEE Silicon Nanotechnology Workshop (SNW2014)",,,,,,2014,June "Y. Takamura,T. Akushichi,A. Sadono,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices",,"J. Appl. Phys.","AIP Publishing LLC.","vol. 115","no. 17","pp. 17C307/1-3",2014,Apr. "Y. Takamura,A. Sadono,T. Akushichi,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in a Si-channel spin accumulation device with a high-quality CoFe/MgO/Si spin injector","The 61st JSAP Spring Meeting, 2014",,,,,,2014,Mar. "Y. Takamura,A. Sadono,T. Akushichi,T. Okishio,Y. Shuto,S. Sugahara","Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices","The 58th Annual Magnetism and Magnetic Materials (MMM) Conference",,,,," AX-05",2013,Nov. "S. Sugahara,Y. Shuto,S. Yamamoto","Energy-efficient nonvolatile logic systems based on CMOS/spintronics hybrid technology","the 222nd Meeting of the Electrochemical Society / the 2012 Pacific Rim Meeting on Electrochemical and Solid-Sate Science (PRIME)",,,,,,2012,Oct. "ŽR–{Cˆê˜Y,Žü“¡—I‰î,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‹Zp‚ð—p‚¢‚½FPGA‚Ì•sŠö”­«ƒpƒ[ƒQ[ƒeƒBƒ“ƒO","•½¬24”NH‹G ‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2012,Sept. "›Œ´‘,Žü“¡—I‰î,ŽR–{Cˆê˜Y","ƒXƒsƒ“ƒgƒƒjƒNƒX/CMOS—Z‡‹Zp:ƒXƒsƒ“ƒgƒ‰ƒ“ƒWƒXƒ^EƒA[ƒLƒeƒNƒ`ƒƒ","•½¬24”NH‹G ‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2012,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAM:ƒXƒŠ[ƒvƒ‚[ƒh“®ì‚Æ‚»‚̉ž—p","•½¬24”NH‹G ‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2012,Sept. "ŽR–{Cˆê˜Y,Žü“¡—I‰î,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«DFFFBET‚É‚¨‚¯‚éÓIƒŠ[ƒN“d—¬‚̉e‹¿","•½¬24”NH‹G ‘æ73‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2012,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAM‚̃Xƒ^ƒeƒBƒbƒNƒmƒCƒYƒ}[ƒWƒ“‚ƃGƒlƒ‹ƒM[«”\‚̉ðÍ","“dŽq’ÊMŠw‰ïWωñ˜HŒ¤‹†‰ï(ICD)ƒVƒŠƒRƒ“Þ—¿EƒfƒoƒCƒXŒ¤‹†‰ï(SDM)‹¤ÃŒ¤‹†‰ï",,,,,,2012,Aug. "›Œ´ ‘,Žü“¡ —I‰î,ŽR–{ Cˆê˜Y","ƒXƒsƒ“ƒgƒƒjƒNƒX/CMOS—Z‡‹Zp: ƒXƒsƒ“‹@”\MOSFET‚Æ‚»‚Ì’áÁ”ï“d—̓ƒWƒbƒN‰ž—p","”¼“±‘ÌEWωñ˜H‹ZpƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2012,July "Y. Shuto,S. Yamamoto,S. Sugahara","Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs","2012 IEEE Silicon Nanotechnology Workshop (SNW2012)",,,,,,2012,June "Y. Shuto,S. Yamamoto,S. Sugahara","Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture","4th IEEE Int. Memory Technology Workshop (IMW2012)",,,,,,2012,May "Y. Takamura,K. Hayashi,Y. Shuto,R. Nakane,S. Sugahara","Fabrication of High-Quality Co2FeSi/SiOxNy/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiOxNy Barrier for Si-Based Spin Transistors",,"J. Electron. Mater.","Springer","vol. 41","no. 5","pp. 954-958",2012,Apr. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAM:ƒXƒ^ƒeƒBƒbƒNƒmƒCƒYƒ}[ƒWƒ“•]‰¿","‘æ59‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,,,,,2012,Mar. "Y. Shuto,S. Yamamoto,S. Sugahara","Evaluation and control of break-even time of nonvolatile SRAM based on spin-transistor architecture with spin-transfer-torque MTJs",,"J. Appl. Phys.",,"vol. 51","no. 4","pp. 040212/1-3",2012, "‚‘º—z‘¾,—ÑŒšŒá,‰eˆä‘׎Ÿ˜Y,Žü“¡—I‰î,›Œ´‘","ƒ‰ƒWƒJƒ‹Ž_’‚‰»–Œ‚ð—p‚¢‚½CFS/SiOxNy/Siƒgƒ“ƒlƒ‹Ú‡‚ÌŒ`¬‚Æ\‘¢•]‰¿","‘æ16‰ñ”¼“±‘̃Xƒsƒ“HŠw‚ÌŠî‘b‚Ɖž—p(PASPS-16)",,,,,"p. 41",2011,Nov. "Y. Shuto,S. Yamamoto,S. Sugahara","Nonvolatile SRAM based on spin-transistor architecture for nonvolatile power-gating systems","International Symposium on Advanced Hybrid Nano Devices (IS-AHND): Prospects by Worldfs Leading Scientists",,,,,,2011,Oct. "S. Yamamoto,Y. Shuto,S. Sugahara","Nonvolatile power-gating FPGAs based on spin-transistor architecture","International Symposium on Advanced Hybrid Nano Devices (IS-AHND): Prospects by Worldfs Leading Scientists",,,,,,2011,Oct. "›Œ´‘,Žü“¡—I‰î,ŽR–{Cˆê˜Y","CMOS/ƒXƒsƒ“ƒgƒƒjƒNƒX—Z‡‹Zp‚É‚æ‚é•sŠö”­«ƒƒWƒbƒNƒVƒXƒeƒ€‚Ì“W–]","“dŽqî•ñ’ÊMŠw‰ï‹ZpŒ¤‹†•ñuŽ¥‹C‹L˜^Eî•ñƒXƒgƒŒ[ƒWv",,,,,"pp. 63-70",2011,Oct. "Y. Takamura,K. Hayashi,Y. Shuto,S. Sugahara","Formation and structural analysis of half-metallic Co2FeSi/SiOxNy/Si contacts with radical-oxynitridation-SiOxNy tunnel barrier","International Symposium on Advanced Hybrid Nano Devices (IS-AHND) : Prospects by Worldfs Leading Scientists",,," paper P-40",,"pp. 127-128",2011,Oct. "?‘º —z‘¾,—Ñ ŒšŒá,Žü“¡ —I‰î,›Œ´ ‘","ƒ‰ƒWƒJƒ‹Ž_’‚‰»–@‚ð—p‚¢‚½Co2FeSi/SiOxNy/Siƒgƒ“ƒlƒ‹Ú‡‚ÌŒ`¬","‘æ72‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,," 31p-ZS-12",,,2011,Sept. "S. Yamamoto,Y. Shuto,S. Sugahara","Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems",,"IET Electronics Letters",,"vol. 47","no. 18","pp. 1027-1029",2011,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAMFƒXƒŠ[ƒvŽžƒŠ[ƒN“d—¬íŒ¸Œø‰Ê","‘æ72‰ñH‹G‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2011,Aug. "Y. Takamura,K. Hayashi,Y. Shuto,S. Sugahara","Formation of half-metallic tunnel junctions of Co2FeSi/SiOxNy/Si using radical oxynitridation technique","Electronic Materials Conf. (EMC) 2011",,," DD-9",,"p. 96",2011,June "S. Yamamoto,Y. Shuto,S. Sugahara","Application of NV-DFF and NV-SRAM using spin-transistor Architecture with spin transfer torque MTJs to nonvolatile power-gating FPGA","IEEE International Magnetics Conference 2011 (INTERMAG)",,,,,,2011,Apr. "S. Yamamoto,Y. Shuto,S. Sugahara","Power-gating ability and power aware design of nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs","IEEE International Magnetics Conference 2011 (INTERMAG)",,,,,,2011,Apr. "Y. Shuto,S. Yamamoto,S. Sugahara","Evaluation and control of break-even time for nonvolatile SRAM using pseudo-spin-MOSFETs wit spin-transfer-torque MTJs","IEEE International Magnetics Conference 2011 (INTERMAG)",,,,,,2011,Apr. "Y. Takamura,T. Sakurai,R. Nakane,Y. Shuto,S. Sugahara","Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing",,"J. Appl. Phys.","American Institute of Physics","Vol. 109","no. 7","pp. 07B768/1-3",2011,Apr. "—ÑŒšŒá,‚‘º—z‘¾,Žü“¡—I‰î,›Œ´‘","RTA–@‚ð—p‚¢‚½Co2FeSi‚ÌŒ`¬‚É‚¨‚¯‚鉊ú‘½‘w–Œ\‘¢‚̉e‹¿","‘æ58‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,," 25a-KM-10",,,2011,Mar. "M. Tanaka,S. Ohya,Y. Shuto,S. Yada,S. Sugahara","III-V and Group-IV Based Ferromagnetic Semiconductors for Spintronics",,"Comprehensive Nanoscience and Technology,Academic Press (Oxford)",,"Vol. 4",,"pp. 447-462",2011,Feb. "Y. Shuto,Y. Takamura,S. Sugahara","Spin-functional MOSFETs based on half-metallic ferromagnet technology","Workshop on Heusler Alloys and Their Spintronics Applications",,,,,,2011,Jan. "›Œ´‘,Žü“¡—I‰î,ŽR–{Cˆê˜Y","CMOS/ƒXƒsƒ“ƒgƒƒjƒNƒX—Z‡‹Zp‚É‚æ‚é•sŠö”­«ƒƒWƒbƒNƒVƒXƒeƒ€‚Ì“W–]",,"‚Ü‚®‚Ë",,"vol. 6","no. 1","pp. 5-15",2011, "Y. Takamura,T. Sakurai,R. Nakane,Y. Shuto,S. Sugahara","Comparative study of full-Heusler Co2FeSi and Co2FeGe alloy thin films formed by rapid thermal annealing","55th Annual Conference on Magnetism and Magnetic Materials (MMM2010)",,," paper CV-02",," p. 114 (program)",2010,Nov. "Y. Shuto,Y. Takamura,S. Sugahara","Numerical simulation analysis of nonlocal multi-terminal devices for spin current detection in semiconductors","55th Annual Conf. on Magnetism and Magnetic Materials",,," paper DD-04",,"p. 124",2010,Nov. "›Œ´‘,Žü“¡—I‰î,ŽR–{Cˆê˜Y","•sŠö”­«ƒƒ‚ƒŠ‘fŽq‚ð—p‚¢‚½•sŠö”­«/‚΂ç‚‚«•âžSRAM‹Zp","2010”NH‹G‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2010,Sept. "ŽR–{Cˆê˜Y,Žü“¡—I‰î,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«DFFFÓIƒŠ[ƒN“d—¬‚ÆBET‚Ì팸","2010”NH‹G ‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2010,Sept. "ŽR–{Cˆê˜Y,Žü“¡—I‰î,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAM‚Æ•sŠö”­«DFF‚ÌFPGA‰ž—p","2010”NH‹G ‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2010,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAMFƒZƒ‹ƒŠ[ƒN“d—¬‚ÆBET‚Ì팸","2010”NH‹G ‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2010,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAMFƒXƒgƒAŽž‚Ì‘‚«ž‚Ý“d—¬§Œä","2010”NH‹G ‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,,,2010,Sept. "ŸNˆä ‘ì–ç,‚‘º —z‘¾,’†ª —¹¹,Žü“¡ —I‰î,›Œ´ ‘","RTA‚É‚æ‚éƒtƒ‹ƒzƒCƒXƒ‰[‡‹àCo2FeGe”––Œ‚̃Gƒsƒ^ƒLƒVƒƒƒ‹Œ`¬","‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,," paper 14p-F-7"," p.73"," 10-018(DVD)",2010,Sept. "Žü“¡—I‰î,‚‘º—z‘¾,›Œ´‘","”ñ‹ÇŠ”z’uƒ}ƒ‹ƒ`ƒ^[ƒ~ƒiƒ‹ƒfƒoƒCƒX‚Ì”’l‰ð̓Vƒ~ƒ…ƒŒ[ƒVƒ‡ƒ“","‘æ71‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,," paper 16a-A-10"," p.73"," 10-044(DVD)",2010,Sept. "T. Sakurai,Y. Takamura,R. Nakane,Y. Shuto,S. Sugahara","Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films by rapid thermal annealing","The 6th International Conf. on the Physics and Applications of Spin Related Phenomena in Semiconductors (PASPS-VI)",,,,," paper P2-22",2010,Aug. "Y. Shuto,S. Yamamoto,S. Sugahara","Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs","The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors",,,,,,2010,Aug. "Y. Shuto,R. Nakane,W. H. Wang,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","A new spin-functional MOSFET based on MTJ technology: Pseudo-spin-MOSFET","The 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors",,,,,,2010,Aug. "Žü“¡—I‰î,’†ª—¹¹,Wenhong Wang,‰îì—TÍ,ŽR–{Cˆê˜Y,“c’†‰ë–¾,’––“_ˆê˜Y,›Œ´ ‘","‹[Ž—ƒXƒsƒ“MOSFET‚Ì컂ƕ]‰¿","2010”Nt‹G ‘æ57‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,,,,,2010,Mar. "Y. Shuto,S. Yamamoto,S. Sugahara","Operating analysis of nonvolatile SRAM using pseudo-spin-MOSFETs","11th Joint MMM-Intermag Conference",,,,,,2010,Jan. "Y. Shuto,R. Nakane,W. H. Wang,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","A New Spin-Functional Metal-Oxide-Semiconductor Field-Effect Transistor Based on Magnetic Tunnel Junction Technology: Pseudo-Spin-MOSFET",,"Appl. Phys. Exp.",,"vol. 3","no. 1","pp. 013003/1-3",2010, "Shuu'ichirou Yamamoto,Yusuke Shuto,Satoshi Sugahara","Nonvolatile SRAM (NV-SRAM) Using Resistive Switching Devices: Variable-Transconductance MOSFET Approach",,"Jpn. J. Appl. Phys",,"vol. 49","no. 4","pp. 040209/1-3",2010, "Y. Shuto,S. Yamamoto,S. Sugahara","Analysis and design of nonvolatile SRAM using spintronics technology","Non-volatile Memory Technology Symposium 2009 (NVMTS09)",,,,," paper P7",2009,Oct. "S. Yamamoto,Yusuke Shuto,Satoshi Sugahara","Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop","International Symposium on Silicon Nano Devices in 2030",,,,," P-50",2009,Oct. "Y. Shuto,R. Nakane,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","Fabrication and characterization of pseudo-spin-MOSFETs","Intl. Conf. Silicon Nano Devices in 2030",,,," paper P-49","pp. 148-149",2009,Oct. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","‹[Ž—ƒXƒsƒ“MOSFET‚ð—p‚¢‚½•sŠö”­«SRAMF“dŒ¹ŽÕ’f“®ìÁ”ï“d—Í‚Ì•]‰¿","•½¬21”NH‹G ‘æ70‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,," paper 10a-TA-5",2009,Sept. "Sanjeewa Dissanayake,•xŽRŒ’‘¾˜Y,Žü“¡—I‰î,›Œ´‘,’|’†[,‚–ØMˆê","’´”––Œ(110)–ÊGOI pŒ^MOSFET‚Ì“d‹C“I“Á«","•½¬21”NH‹G ‘æ70‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,," paper 11p-TH-3",2009,Sept. "Shuufichirou.Yamamoto,Yusuke Shuto,Satoshi Sugahara","Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices","Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC)",,,,,"pp. 531-534",2009,Sept. "Žü“¡—I‰î,ŽR–{Cˆê˜Y,›Œ´‘","Spin-RAM/ReRAM‹Zp‚ð—p‚¢‚½‹@”\MOSFET‚Æ‚»‚Ì•sŠö”­«SRAM/ƒtƒŠƒbƒvƒtƒƒbƒv‚ւ̉ž—p","•½¬21”NH‹G ‘æ70‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,," paper 9p-TA-8",2009,Sept. "›Œ´‘,Žü“¡—I‰î,ŽR–{Cˆê˜Y","ƒXƒsƒ“‹@”\MOSFET‚É‚æ‚é•sŠö”­«ƒƒbƒN •sŠö”­«ƒpƒ[ƒQ[ƒeƒBƒ“ƒOEƒƒWƒbƒN‚ւ̉ž—p •sŠö”­«SRAM/ƒtƒŠƒbƒvƒtƒƒbƒv‚̉”\«‚ðŒŸØ",,"Semiconductor FPD World",,,,"pp. 46-49",2009,Sept. "Y. Shuto,S. Yamamoto,S. Sugahara","Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors","Intermag 2009",,,," paper CT-02","p. 195",2009,May "‚‘º—z‘¾,’†ª—¹¹,Žü“¡—I‰î,›Œ´‘","•sƒ•¨•ÎÍ‹Zp‚ð—p‚¢‚½Co2FeSiƒ\[ƒX/ƒhƒŒƒCƒ“MOSFET‚Ì컂ƕ]‰¿","‘æ56‰ñ‰ž—p•¨—ŠwŠÖ˜A˜A‡u‰‰‰ï",,," 1p-TB-9",,,2009,Mar. "ŽR–{Cˆê˜Y,Žü“¡—I‰î,›Œ´‘","ƒXƒsƒ“‹@”\CMOS‚É‚æ‚é•sŠö”­«‚‹@”\E‚«”\ƒƒWƒbƒN",,"ƒXƒsƒ“ƒgƒƒjƒNƒX‚ÌŠî‘b‚ÆÞ—¿E‰ž—p‹Zp‚ÌÅ‘Oü","ƒV[ƒGƒ€ƒV[o”Å",," 27Í","pp. 319-330",2009, "Y. Shuto,S. Yamamoto,S. Sugahara","Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices","Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials",,,,,"pp. 810-811",2009, "›Œ´ ‘,‚‘º —z‘¾,’†ª —¹¹,Žü“¡—I‰î,ŽR–{ Cˆê˜Y","ƒXƒsƒ“MOSFET ‚ð—p‚¢‚½ƒXƒsƒ“ƒgƒ‰ƒ“ƒWƒXƒ^EƒGƒŒƒNƒgƒƒjƒNƒX","‘æ69‰ñ‰ž—p•¨—Šw‰ïŠwpu‰‰‰ï",,,,," paper 3p-E-3",2008,Sept. "“c’† ‰ë–¾,Žü“¡ —I‰î,–î“c T‰î,™‰Y –MW,ƒtƒ@ƒ€ ƒiƒ€ ƒnƒC,‰¡ŽR ³Žj,‘å–î ”E,’†ª —¹¹,›Œ´ ‘","”¼“±‘̃Xƒsƒ“ƒgƒƒjƒNƒXEƒwƒeƒ\‘¢“dŽqƒfƒoƒCƒX‚ÌŒ¤‹†","•¶•”‰ÈŠwȉȊwŒ¤‹†”ï•â•‹à“Á’è—̈挤‹†u”¼“±‘̃iƒmƒXƒsƒ“ƒgƒƒjƒNƒXv•½¬17”N“x¬‰Ê•ñ‰ï",,,,,,2006,Jan. "“c’† ‰ë–¾,ƒtƒ@ƒ€ ƒiƒ€ ƒnƒC,‰¡ŽR ³Žj,Žü“¡ —I‰î,ƒA[ƒTƒ“ƒiƒYƒ€ƒ‹,‘å–î ”E,›Œ´ ‘","”¼“±‘̃Xƒsƒ“ƒgƒƒjƒNƒXEƒwƒeƒ\‘¢“dŽqƒfƒoƒCƒX‚ÌŒ¤‹†","•¶•”‰ÈŠwȉȊwŒ¤‹†”ï•â•‹à“Á’è—̈挤‹†u”¼“±‘̃iƒmƒXƒsƒ“ƒgƒƒjƒNƒXv•½¬17”N“x u‰Ä‚ÌŒ¤‹†‰ïv",,,,,,2005,June "A. M. Nazmul,Tomohiro Amemiya,Yusuke Shuto,Satoshi Sugahara,Masaaki Tanaka","High temperature ferromagnetism in GaAs-Based heterostructures with Mn ƒÂ doping",,"Phys. Rev. Lett.",,"Vol. 95","No. 017201",,2005, "A. M. Nazmul,‰J‹{’qG,Žü“¡—I‰î,›Œ´ ‘,“c’†‰ë–¾","Mn ƒfƒ‹ƒ^ƒh[ƒvGaAs‚ðƒx[ƒX‚Æ‚µ‚½”¼“±‘Ì‚Öƒeƒ\‘¢‚É‚¨‚¯‚邉·‹­Ž¥«‚Æ‚»‚̧Œä","‘æ51‰ñt‹G‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,,,," 31p-ZK-7",2004, "A. M. Nazmul,T. Amemiya,Y. Shuto,S. Sugahara,M. Tanaka","Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control","The 13th International Conference on Molecular Beam Epitaxy (MBE-2004)",,,,,,2004,