"T. Oshima,K. Kaminaga,A. Mukai,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,S. Fujita,A. Ohtomo","Semi-insulation behavior in conducting β-Ga<sub>2</sub>O<sub>3</sub> single crytal surfaces by thermal oxidation","32nd Electronic materials Symposium",,,,,,2013,July
"T. Oshima,K. Kaminaga,A. Mukai,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,S. Fujita,A. Ohtomo","Semi-insulation of conducting β-Ga<sub>2</sub>O<sub>3</sub> single crystal surfaces by thermal oxidation","The 40th International Symposium on Compound Semiconductors",,,,,,2013,May
"T. Oshima,K. Kaminaga,A. Mukai,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,S. Fujita,A. Ohtomo","Formation of semi-insulating layers on semiconducting β-Ga<sub>2</sub>O<sub>3</sub> single crystals by thermal oxidation",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","Volume 52","Number 5","  051101-1-5",2013,Apr.
"大島 孝仁,神永 健一,向井 章,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,藤田 静雄,大友 明","熱酸化による<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>単結晶表面の半絶縁層形成","第60回応用物理学会春季学術講演会",,,,,,2013,Mar.
"藤田 静雄,東脇 正高,佐々木 公平,倉又 朗人,増井 建和,山腰 茂伸,大島 孝仁,大友明","ワイドギャップ半導体酸化ガリウムの基本特性と応用","日本学術振興会・透明酸化物光・電子材料第166委員会第55回研究会",,,,,,2012,Apr.
"藤田 静雄,東脇 正高,佐々木 公平,倉又 朗人,増井 建和,山脇 茂伸,大島 孝仁,大友 明","酸化ガリウム半導体の機能とデバイス応用","日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会第78回研究会",,,,,,2012,Mar.
"Takeya Okuno,Takayoshi Oshima,Sam-Dong Lee,Shizuo Fujita","Growth of SnO2 crystalline thin films by mist chemical vapour deposition method",,"Physica Status Solidi (c)",,"Vol. 8",,"pp. 540-542",2011,Feb.
"藤田 静雄,大島 孝仁,金子 健太郎","酸化ガリウム半導体の表面制御と高品質単結晶薄膜の作製",,"表面科学",,"Vol. 31","No. 12","pp. 643-650",2010,Dec.
"Shizuo Fujita,Takumi Ikenoue,Naoki Kameyama,Takayoshi Oshima","Ultraviolet Photodetectors with Novel Oxide Thin Films","52nd Electronic Materials Conference",,,,,,2010,June
"Takayoshi Oshima,Takeya Okuno,Shizuo Fujita","UV-B sensing with tin dioxide semiconductors","37th International Symposium on Compound Semiconductors",,,,,"  TuD1-2",2010,May
"Takeya Okuno,Takayoshi Oshima,Sam-Dong Lee,Shizuo Fujita","Characteristics of high quality SnO2 thin films grown by novel mist chemical vapor deposition method.","37th International Symposium on COmpound Semiconductor",,,,,"  TuP93",2010,May
"竹田聡,新井直樹,小林恭,樋野治道,大島孝仁,藤田静雄","Ga<sub>2</sub>O<sub>3</sub>紫外線センサの作製と連続監視システムへの応用","2010年春季第57回応用物理学会関係連合講演会",,,,,"  19p-TM-1",2010,Mar.
"奥野剛也,大島孝仁,藤田静雄","ミストCVD法によるSnO2薄膜の作製","2010春季第57回応用物理学会関係連合講演会",,,,,"  19p-TM-3",2010,Mar.
"藤田 静雄,大島 孝仁,金子 健太郎","ワイドバンドギャップ酸化ガリウム半導体",,"応用物理",,"Vol. 78","No. 12","pp. 1150-1154",2009,Dec.
"Takayoshi Oshima,Takeya Okuno,Shizuo Fujita","UV-B sensor based on a SnO2 thin film",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"  120207",2009,Dec.
"大島孝仁,奥野剛也,藤田静雄","SnO2薄膜を用いたUV-B検出器","第6回薄膜材料デバイス研究会",,,,,"  3P52",2009,Nov.
"Shizuo Fujita,Kentaro Kaneko,Takayoshi Oshima","Wide bandgap oxide semiconductors for novel functions and applications","216th Electrochemical Society Meeting",,,,,"  2340",2009,Oct.
"大島 孝仁,奥野 剛也,新井 直樹,竹田 聡,小林 恭,樋野 治道,藤田 静雄","ワイドギャップ酸化物半導体β-Ga<sub>2</sub>O<sub>3</sub>を用いた炎センサ","2009年秋季第70回応用物理学会学術講演会",,,,,"  9p-J-1",2009,Sept.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Yasushi Kobayashi,Shizuo Fujita","β-Al<sub>2r</sub>O<subGa<sub>2-2r</sub>O<sub>3</sub> thin film growth by molecular beam epitaxy","36th International Symposum on Compound Semiconductors",,,,,"  7.5",2009,Aug.
"大島 孝仁,奥野 剛也,新井 直樹,竹田 聡,小林 恭,樋野 治道,藤田 静雄","β-Ga<sub>2</sub>O<sub>3</sub>based sensor for flame detection","第28回電子材料シンポジウム",,,,,"  J4",2009,July
"大島孝仁,奥野剛也,新井直樹,竹田聡,小林恭,樋野治道,藤田静雄","酸化ガリウムを用いた殺菌ランプ監視用深紫外光検出システムの実用化","平成20年度VBL研究助成成果報告会",,,,,,2009,June
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Yasushi Kobayashi,Shizuo Fujita","β-Al<sub>2r</sub>Ga<sub>2-2r</sub>O<sub>3</sub> thin film growth by molecular beam epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"  0702002",2009,June
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Satoshi Takeda,Yasushi Kobayashi,Harumichi Hino,Shizuo Fujita","Solar-blind photodetector based on β-Ga<sub>2</sub>O<sub>3</sub> and its application to a flame sensor","6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics",,,,,"  16a-O004",2009,Apr.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Yasushi Kobayashi,Shizuo Fujita","Patterning of β-Ga<sub>2</sub>O<sub>3</sub> for device fabrication","6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics",,,,,"  16p-P167",2009,Apr.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Yasushi Kobayashi,Shizuo Fujita","Wet etching of β-Ga<sub>2</sub>O<sub>3</sub>-based sensor",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"  040208",2009,Apr.
"大島孝仁,奥野剛也,新井直樹,小林恭,藤田静雄","分子線エピタキシー法によるβ-Al<sub>2r</sub>Ga<sub>2-2r</sub>O<sub>3</sub>薄膜の作製","2009年春季第56回応用物理学関連連合講演会",,,,,"  31p-ZK-17",2009,Mar.
"大島孝仁,奥野剛也,新井直樹,竹田聡,小林恭,樋野治道,藤田静雄","β-Ga<sub>2</sub>O<sub>3</sub>基板を用いて作製した炎センサ","2009年春季第56回応用物理学関係連合講演会",,,,,"  31p-ZK16",2009,Mar.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Norihito Suzuki,Yasushi Kobayashi,Harumichi Hino,Shizuo Fujita","Flame detection by a β-Ga<sub>2</sub>O<sub>3</sub>-based sensor",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"  011605",2009,Jan.
"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Potentially high breakdown field in β-Ga<sub>2</sub>O<sub>3</sub> semiconductors","IEEE Nanotechnology Materials and Device Conference 2008",,,,,"  TuB I-3",2008,Oct.
"大島孝仁,奥野剛也,新井直樹,鈴木悟仁,大平重男,藤田静雄","β-Ga<sub>2</sub>O<sub>3</sub>基板を用いて作製したショットキーダイオードの破壊特性","2008年秋季第69回応用物理学会学術講演会",,,,,"  3a-ZR-7",2008,Sept.
"Shigeo Ohira,Naoki Arai,Takayoshi Oshima,Shizuo Fujita","Atomically controlled surfaces with step and terrace of β-Ga<sub>2</sub>O<sub>3</sub> single crystal substrates for thin film growth",,"Appl. Surf. Sci.",,"Vol. 254",,"pp. 7838-7842",2008,Sept.
"大島孝仁,藤田静雄","酸化ガリウムを利用した半導体炎検知器","日本材料学会半導体エレクトロニクス部門第21回研究会",,,,,"  17",2008,Sept.
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Surface morphology of homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> thin films grown by molecular beam epitaxy",,"Thin Solid Films",,"Vol. 516",,"pp. 5768-5771",2008,July
"Shizuo Fujita,Takayoshi Oshima,Daisuke Shinohara,Takeya Okuno","Wide band gap gallium oxide semiconductros with deep ultraviolet optical functions","International Conference on Electronic Materials 2008",,,,,"  A1-S3.4",2008,July
"大島 孝仁,新井 直樹,鈴木 悟仁,大平 重男,藤田 静雄","Schottky barrier diode based on β-Ga<sub>2</sub>O<sub>3</sub>","第27回電子材料シンポジウム",,,,,"  J7",2008,July
"Takayoshi Oshima,Shizuo Fujita","Properties of Ga<sub>2</sub>O<sub>3</sub>-based (In<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> alloy thin films grown by molecular beam epitaxy",,"Phys. Status Solidi C",,"Vol. 5",,"pp. 3113-3115",2008,July
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Deep UV detectors with a novel Ga<sub>2</sub>O<sub>3</sub>  semiconductor","50th Electronic Materials Conference",,,,,"  Q5",2008,June
"篠原大輔,西中浩之,大島孝仁,騎馬啓嗣,鎌田雄大,川原村敏幸,藤田静雄","ミストCVD法によるsapphire基板上α-Ga<sub>2</sub>O<sub>3</sub> 薄膜の成長","2008年春季第55回応用物理学会関係連合講演会",,,,,"  28a-W-2",2008,Mar.
"大島孝仁,奥野剛也,藤田静雄,新井直樹,鈴木悟仁,大平重男","β-Ga<sub>2</sub>O<sub>3</sub> 基板を利用した深紫外光検出器","2008年春季第55回応用物理学会関係連合講演会",,,,,"  28p-ZC-12",2008,Mar.
"大島孝仁,藤田静雄,新井直樹,鈴木悟仁,大平重男","分子線エピタキシー法によるβ-Ga<sub>2</sub>O<sub>3</sub> 基板上へのβ-Ga<sub>2</sub>O<sub>3</sub> ステップフロー成長","2008年春季第55回応用物理学会関係連合講演会",,,,,"  28a-W-1",2008,Mar.
"Takayoshi Oshima,Takeya OKuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga<sub>2</sub>O<sub>3</sub> substrates",,"Appl. Phys. Express",,"Vol. 1",,"  011202",2008,Jan.
"Takayoshi Oshima,Takeya Okuno,Shizuo Fujita","Ga<sub>2</sub>O<sub>3</sub>  thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors",,"Jpn. J. Appl. Phys.",,"Vol. 46",,"pp. 7217-7220",2007,Nov.
"Daisuke Shinohara,Hiroyuki Nishinaka,Takayoshi Oshima,Shizuo Fujita","Epitaxial growth of wide bandgap semiconductor: α-Ga<sub>2</sub>O<sub>3</sub>  thin film on α-AlGa<sub>2</sub>O<sub>3</sub> by ultrasonic spray chemical vapor deposition","14th International Workshop on Oxide Electronics",,,,,"  PII-54",2007,Oct.
"Takayoshi Oshima,Naoki Arai,Shigeo Ohira,Shizuo Fujita","Homoepitaxial step-flow growth of β-Ga<sub>2</sub>O<sub>3</sub>  thin films by molecular beam epitaxy","14th International Workshop on Oxide Electronics",,,,,"  PII-20",2007,Oct.
"Takayoshi Oshima,Norihito Suzuki,Naoki Arai,SHigeo Ohira,Shizuo Fujita","Properties of wide bandgap β-Ga<sub>2</sub>O<sub>3</sub> semiconductros grown by molecular beam epitaxy","34th International Symposium on Compound Semiconductors",,,,,"  MoC P44",2007,Oct.
"Takayoshi Oshima,Takeya Okuno,Shizuo Fujita","MBE growth and characterization of Ga<sub>2</sub>O<sub>3</sub> and (InGa)<sub>2</sub>O<sub>3</sub>films with ultraviolet optical functions","49th Electronic Materials Conference",,,,,"  AA4",2007,June
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Properties of homoepitaxial-grown β-Ga<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy","5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics",,,,,"  P43",2007,May
"Takayoshi Oshima,Shizuo Fujita","MBE growth and characterization of Ga<sub>2</sub>O<sub>3</sub> and (InGa)<sub>2</sub>O<sub>3</sub> films for ultraviolet applications","211th Electrochemical Society Meeting",,,,,"  E5 769",2007,May
"Lv  Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration dependence of band gap shift in n -type ZnO:Al films",,"Journal of Applied Physics",,"Vol. 101","  083705",,2007,Apr.
"大島孝仁,藤田静雄","MBEによる(In<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>薄膜の成長","2007年春季第54回応用物理学会関連連合講演会",,,,,"  29p-SQ-10",2007,Mar.
"Lv  Jianguo,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima,Shizuo Fujita","ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition",,"Journal of Crystal Growth",,"Vol. 299","  1",,2007,Feb.
"Lv  Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration induced band-gap shift in Al-doped Zn<sub>1-x</sub>Mg<sub>x</sub>O thin films",,"Applied Physics Letters",,"Vol. 89","  26",,2006,Dec.
"Takayoshi Oshima,Shizuo Fujita","(111)-oriented Zn<sub>3</sub>N<sub>2</sub> growth on a-plane sapphire substrates by molecular beam epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 45",,"pp. 8653-8655",2006,Nov.
"大島孝仁,藤田静雄","MBEによる窒化亜鉛(Zn3N2)薄膜の成長","2006年秋季第67回応用物理学会学術講演会",,,,,"  29a-P2-12",2006,Aug.
"大島孝仁,山下裕泰,坂井俊,藤田静雄","MBEによる酸化銅薄膜の成長とp型伝導性","2005年春季第52回応用物理学会関連連合講演会",,,,,"  1a-ZN-8",2005,Mar.