"Takayoshi Oshima,Takeya Okuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Potentially high breakdown field in β-Ga<sub>2</sub>O<sub>3</sub> semiconductors","IEEE Nanotechnology Materials and Device Conference 2008",,,,,"  TuB I-3",2008,Oct.
"Shigeo Ohira,Naoki Arai,Takayoshi Oshima,Shizuo Fujita","Atomically controlled surfaces with step and terrace of β-Ga<sub>2</sub>O<sub>3</sub> single crystal substrates for thin film growth",,"Appl. Surf. Sci.",,"Vol. 254",,"pp. 7838-7842",2008,Sept.
"大島孝仁,奥野剛也,新井直樹,鈴木悟仁,大平重男,藤田静雄","β-Ga<sub>2</sub>O<sub>3</sub>基板を用いて作製したショットキーダイオードの破壊特性","2008年秋季第69回応用物理学会学術講演会",,,,,"  3a-ZR-7",2008,Sept.
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Surface morphology of homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> thin films grown by molecular beam epitaxy",,"Thin Solid Films",,"Vol. 516",,"pp. 5768-5771",2008,July
"大島 孝仁,新井 直樹,鈴木 悟仁,大平 重男,藤田 静雄","Schottky barrier diode based on β-Ga<sub>2</sub>O<sub>3</sub>","第27回電子材料シンポジウム",,,,,"  J7",2008,July
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Deep UV detectors with a novel Ga<sub>2</sub>O<sub>3</sub>  semiconductor","50th Electronic Materials Conference",,,,,"  Q5",2008,June
"大島孝仁,藤田静雄,新井直樹,鈴木悟仁,大平重男","分子線エピタキシー法によるβ-Ga<sub>2</sub>O<sub>3</sub> 基板上へのβ-Ga<sub>2</sub>O<sub>3</sub> ステップフロー成長","2008年春季第55回応用物理学会関係連合講演会",,,,,"  28a-W-1",2008,Mar.
"大島孝仁,奥野剛也,藤田静雄,新井直樹,鈴木悟仁,大平重男","β-Ga<sub>2</sub>O<sub>3</sub> 基板を利用した深紫外光検出器","2008年春季第55回応用物理学会関係連合講演会",,,,,"  28p-ZC-12",2008,Mar.
"Takayoshi Oshima,Takeya OKuno,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga<sub>2</sub>O<sub>3</sub> substrates",,"Appl. Phys. Express",,"Vol. 1",,"  011202",2008,Jan.
"Takayoshi Oshima,Norihito Suzuki,Naoki Arai,SHigeo Ohira,Shizuo Fujita","Properties of wide bandgap β-Ga<sub>2</sub>O<sub>3</sub> semiconductros grown by molecular beam epitaxy","34th International Symposium on Compound Semiconductors",,,,,"  MoC P44",2007,Oct.
"Takayoshi Oshima,Naoki Arai,Shigeo Ohira,Shizuo Fujita","Homoepitaxial step-flow growth of β-Ga<sub>2</sub>O<sub>3</sub>  thin films by molecular beam epitaxy","14th International Workshop on Oxide Electronics",,,,,"  PII-20",2007,Oct.
"Takayoshi Oshima,Naoki Arai,Norihito Suzuki,Shigeo Ohira,Shizuo Fujita","Properties of homoepitaxial-grown β-Ga<sub>2</sub>O<sub>3</sub> by molecular beam epitaxy","5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics",,,,,"  P43",2007,May