"ŽΒŒ΄‘ε•γ,Ό’†_”V,‘哇Fm,‹R”nŒ[Žk,Š™“c—Y‘ε,μŒ΄‘Ί•qK,“‘“cΓ—Y","ƒ~ƒXƒgCVD–@‚Ι‚ζ‚ιsapphireŠξ”ヿ-Ga2O3 ”––Œ‚̐¬’·","2008”Nt‹G‘ζ55‰ρ‰ž—p•¨—Šw‰οŠΦŒW˜A‡u‰‰‰ο",,,,," 28a-W-2",2008,Mar. "Lv Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration dependence of band gap shift in n -type ZnO:Al films",,"Journal of Applied Physics",,"Vol. 101"," 083705",,2007,Apr. "Lv Jianguo,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima,Shizuo Fujita","ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition",,"Journal of Crystal Growth",,"Vol. 299"," 1",,2007,Feb. "Lv Jianguo,Shizuo Fujita,Toshiyuki Kawaharamura,Hiroyuki Nishinaka,Yudai Kamada,Takayoshi Oshima","Carrier concentration induced band-gap shift in Al-doped Zn1-xMgxO thin films",,"Applied Physics Letters",,"Vol. 89"," 26",,2006,Dec.