"J. Nishii,A. Ohtomo,M. Ikeda,Y. Yamada,K. Ohtani,H. Ohno,M. Kawasaki","High-throughput synthesis and characterization of Mg<sub>1-x</sub>Ca<sub>x</sub>O films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors",,"Applied Surface Science",,"Vol. 252","No. 7","pp. 2507-2511",2006,Jan.
"J. Nishii,A. Ohtomo,K. Ohtani,H. Ohno,M. Kawasaki","High-mobility field-effect transistors based on single-crystalline ZnO channels",,"Japanese Journal of Applied Physics Part 2-Letters & Express Letters",,"Vol. 44","No. 37-41","pp. L1193-L1195",2005,Sept.
"T. I. Suzuki,A. Ohtomo,A. Tsukazaki,F. Sato,J. Nishii,H. Ohno,M. Kawasaki","Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO<sub>4</sub> heterointerface",,"Advanced Materials",,"Vol. 16","No. 21","pp. 1887-1890",2004,Nov.
"F. M. Hossain,J. Nishii,S. Takagi,T. Sugihara,A. Ohtomo,T. Fukumura,H. Koinuma,H. Ohno,M. Kawasaki","Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors",,"Physica E-Low-Dimensional Systems & Nanostructures",,"Vol. 21","No. 2-4","pp. 911-915",2004,Mar.
"F. M. Hossain,J. Nishii,S. Takagi,A. Ohtomo,T. Fukumura,Hiroshi Fujioka,H. Ohno,H. Koinuma,M. Kawasaki","Modeling and simulation of polycrystalline ZnO thin-film transistors",,"Journal of Applied Physics",,"Vol. 94","No. 12","pp. 7768-7777",2003,Dec.
"J. Nishii,F. M. Hossain,S. Takagi,T. Aita,K. Saikusa,Y. Ohmaki,I. Ohkubo,S. Kishimoto,A. Ohtomo,T. Fukumura,F. Matsukura,Y. Ohno,H. Koinuma,H. Ohno,M. Kawasaki","High mobility thin film transistors with transparent ZnO channels",,"Japanese Journal of Applied Physics Part 2-Letters",,"Vol. 42","No. 4A","pp. L347-L349",2003,Apr.