"A. Tsukazaki,S. Akasaka,K. Nakahara,Y. Ohno,H. Ohno,D. Maryenko,A. Ohtomo,M. Kawasaki","Observation of the fractional quantum Hall effect in an oxide",,"Nature Materials","Nature Publishing Group","Vol. 9","No. 11","pp. 889-893",2010,Oct.
"A. Tsukazaki,S. Akasaka,K. Nakahara,A. Kamisawa,Y. Ohno,H. Ohno,A. Ohtomo,M. Kawasaki","Fractional quantum Hall effect in MgZnO/ZnO heterostructures","The 2010 WPI-AIMR Annual Workshop",,,,,,2010,Mar.
"A. Tsukazaki,A. Ohtomo,S. Akasaka,K. Nakahara,Y. Ohno,H. Ohno,M. Kawasaki","The fractional quantum Hall effect in MgZnO/ZnO based haterostructures","16th International Workshop on Oxide Electronics",,,,,,2009,Oct.
"’Ë�è “Ö,�Ô�â �r•ã,’†Œ´ Œ’,�_àV Œö,‘å–ì —TŽO,‘å–ì ‰p’j,‘å—F –¾,�ì�è‰ëŽi","2DEGˆÚ“®“x100,000 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>‚ð‰z‚¦‚éMgZnO/ZnOŠE–Ê‚ÌŽÀŒ»","2009”N�H‹G‘æ70‰ñ‰ž—p•¨—�Šw‰ïŠw�p�u‰‰‰ï",,,,,,2009,Sept.
"A. Tsukazaki,A. Ohtomo,D. Chiba,Y. Ohno,H. Ohno,M. Kawasaki","Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric",,"Applied Physics Letters",,"Vol. 93","No. 24","  241905-1-3",2008,Dec.
"A. Ohtomo,A. Tsukazaki,T. Kita,Y. Ohno,H. Ohno,K. Nakahara,H. Yuji,K. Tamura,S. Akasaka,H. Takasu,M. Kawasaki","Quantum Hall effect in ZnO","WPI & IFCAM Joint Workshop "Challenge of Interdisciplinary Materials Science to Technological Innovation of the 21st Century"",,,,,,2008,Feb.
"’Ë�è “Ö,‘å—F –¾,–k ’q—m,‘å–ì —TŽO,‘å–ì ‰p’j,�ì�è ‰ëŽi","ZnO/MgZnOŠE–Ê‚É‚¨‚¯‚é—ÊŽqƒz�[ƒ‹Œø‰Ê",,"ŒÅ‘Ì•¨—�",,"Vol. 42","No. 9","pp. 559-567",2007,Sept.
"‘å—F –¾,’Ë�è “Ö,–k ’q—m,‘å–ì —TŽO,‘å–ì ‰p’j,�ì�è‰ëŽi","ZnO‚Ì—ÊŽqƒz�[ƒ‹Œø‰Ê",,"‰ž—p“dŽq•¨�«•ª‰È‰ïŽ�",,"Vol. 13","No. 2","p. 73-78",2007,June
"A. Ohtomo,A. Tsukazaki,T. Kita,Y. Ohno,H. Ohno,M. Kawasaki","Quantum Hall effect in polar oxide heterostructures","DFG-Kolloquium �gQuantum Hall System�h",,,,,,2007,June
"A. Tsukazaki,A. Ohtomo,T. Kita,Y. Ohno,H. Ohno,M. Kawasaki","Quantum Hall effect in polar oxide heterostructures",,"Science",,"Vol. 315","No. 5817","pp. 1388-1391",2007,Mar.
"J. Nishii,A. Ohtomo,M. Ikeda,Y. Yamada,K. Ohtani,H. Ohno,M. Kawasaki","High-throughput synthesis and characterization of Mg<sub>1-x</sub>Ca<sub>x</sub>O films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors",,"Applied Surface Science",,"Vol. 252","No. 7","pp. 2507-2511",2006,Jan.
"J. Nishii,A. Ohtomo,K. Ohtani,H. Ohno,M. Kawasaki","High-mobility field-effect transistors based on single-crystalline ZnO channels",,"Japanese Journal of Applied Physics Part 2-Letters & Express Letters",,"Vol. 44","No. 37-41","pp. L1193-L1195",2005,Sept.
"‘å—F –¾,�ì�è ‰ëŽi,‘å–ì ‰p’j","Ž_‰»ˆŸ‰”“dŠEŒø‰ÊƒfƒoƒCƒX",,"ŒÅ‘Ì•¨—�",,"Vol. 40","No. 6","pp. 407-414",2005,June
"A. Tsukazaki,M. Kubota,A. Ohtomo,T. Onuma,K. Ohtani,H. Ohno,S. F. Chichibu,M. Kawasaki","Blue light-emitting diode based on ZnO",,"Japanese Journal of Applied Physics Part 2-Letters & Express Letters",,"Vol. 44","No. 20-23","pp. L643-L645",2005,May
"Y. Yamada,T. Fukumura,M. Ikeda,M. Ohtani,H. Toyosaki,A. Ohtomo,F. Matsukura,H. Ohno,M. Kawasaki","Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti<sub>1-x-y</sub>Zr<sub>x</sub>Hf<sub>y</sub>O<sub>2</sub> for bandgap engineering",,"Journal of Superconductivity",,"Vol. 18","No. 1","pp. 109-113",2005,Feb.
"‘å—F –¾,�ì�è ‰ëŽi,‘å–ì ‰p’j","Ž_‰»ˆŸ‰”“dŠEŒø‰ÊƒfƒoƒCƒX‚Ì�i“W‚Ɖۑè",,"‰ž—p“dŽq•¨�«•ª‰È‰ïŽ�",,"Vol. 11","No. 1","pp. 26-33",2005,Jan.
"A. Tsukazaki,A. Ohtomo,T. Onuma,M. Ohtani,T. Makino,M. Sumiya,K. Ohtani,S. F. Chichibu,S. Fuke,Y. Segawa,H. Ohno,H. Koinuma,M. Kawasaki","Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO",,"Nature Materials",,"Vol. 4","No. 1","pp. 42-46",2005,Jan.
"T. I. Suzuki,A. Ohtomo,A. Tsukazaki,F. Sato,J. Nishii,H. Ohno,M. Kawasaki","Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO<sub>4</sub> heterointerface",,"Advanced Materials",,"Vol. 16","No. 21","pp. 1887-1890",2004,Nov.
"F. M. Hossain,J. Nishii,S. Takagi,T. Sugihara,A. Ohtomo,T. Fukumura,H. Koinuma,H. Ohno,M. Kawasaki","Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors",,"Physica E-Low-Dimensional Systems & Nanostructures",,"Vol. 21","No. 2-4","pp. 911-915",2004,Mar.
"F. M. Hossain,J. Nishii,S. Takagi,A. Ohtomo,T. Fukumura,Hiroshi Fujioka,H. Ohno,H. Koinuma,M. Kawasaki","Modeling and simulation of polycrystalline ZnO thin-film transistors",,"Journal of Applied Physics",,"Vol. 94","No. 12","pp. 7768-7777",2003,Dec.
"J. Nishii,F. M. Hossain,S. Takagi,T. Aita,K. Saikusa,Y. Ohmaki,I. Ohkubo,S. Kishimoto,A. Ohtomo,T. Fukumura,F. Matsukura,Y. Ohno,H. Koinuma,H. Ohno,M. Kawasaki","High mobility thin film transistors with transparent ZnO channels",,"Japanese Journal of Applied Physics Part 2-Letters",,"Vol. 42","No. 4A","pp. L347-L349",2003,Apr.