"K.Tuokedaerhan,‹ΰ“c—ƒ,Kuniyuki KAKUSHIMA,Ahmet Parhat,Akira Nishiyama,™ˆδM”V,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Impact of annealing ambient for La2O3/Si capacitor","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by Worldfs Leading Scientists",,,,,,2013,
"‹ΰ“c—ƒ,Miyuki Kouda,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effect of rare earth oxide capping for La-based gate oxides","Taiwan-Japan Workshop on gNano Devicesh",,,,,,2011,
"Ahmet Parhat,—ˆŽR‘ε—S,‹ΰ“c—ƒ,—ι–Ψ ‘ρ–η,Tomotsune Koyanagi,Miyuki Kouda,ƒ}ƒCƒ}ƒCƒeƒB ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"Ahmet Parhat,—ˆŽR‘ε—S,‹ΰ“c—ƒ,—ι–Ψ ‘ρ–η,Tomotsune Koyanagi,Miyuki Kouda,ƒ}ƒCƒ}ƒCƒeƒB ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,—ˆŽR‘ε—S,‹ΰ“c —ƒ,—ι–Ψ  ‘ρ–η,Tomotsune Koyanagi,Miyuki Kouda,M. Mamatrishat,Takamasa Kawanago,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Scaling of EOT Beyond 0.5nm","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"‹ΰ“c—ƒ,K“c‚έ‚δ‚«,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Tm-oxide/La2O3\‘’ƒQ[ƒgβ‰–Œ‚ΜŠE–Κ“Α«•]‰Ώ","‘ζ‚V‚P‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2010,Sept.
"‹ΰ“c—ƒ,K“c‚έ‚δ‚«,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Effect of Rare Earth Oxide Capping for La-based Gate Oxides","•‘‡‘n‘’—ΜˆζƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2010,