"Miyuki Kouda,鈴木 拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,安田哲二","Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition",,"Japanese Journal of Applied Physics",,"Vol. 51",,"pp. 121101-1-121101-5,",2012,Dec.
"鈴木 拓也,久保田透,Ahmet Parhat,HIROSHI IWAI","La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics",,"Journal of Vacuum Science & Technology A",,"Vol. 30","No. 5","pp. 051507-1-8",2012,July
"Takamasa Kawanago,鈴木 拓也,Yeonghun Lee,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process",,"Solid-State Electronics",,"Vol. 68",,"pp. .68-72",2012,Feb.
"Miyuki Kouda,鈴木 拓也,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI","Stack structures of ALD- La2O3 and CVD-CeO2 : fabrication and mobility improvement effects","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"鈴木 拓也,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Takamasa Kawanago,鈴木 拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","An effective process for oxygen defect suppression for La-based oxide gate dielectric","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"鈴木 拓也,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,安田哲二","ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価","第72回応用物理学会学術講演会",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,来山大祐,金田 翼,鈴木  拓也,Tomotsune Koyanagi,Miyuki Kouda,M. Mamatrishat,Takamasa Kawanago,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Scaling of EOT Beyond 0.5nm","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"鈴木 拓也,川那子高暢,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","希釈酸素雰囲気熱処理を用いたLaシリケート/Si MOS構造のVFB/Vthシフトの低EOTへの適用","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"川那子高暢,鈴木 拓也,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","An Effective Process for Oxygen Defects Suppression for La-based Oxide Gate Dielectric","複合創造領域シンポジウム",,,,,,2010,