"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","真空アニール法がAl2O3/GaSb MOS界面に与える影響",,"電子情報通信学会技術研究報告 信学技報",,"vol. 113","no. 176","pp. 37-42",2013,Aug.
"Takuya Suzuki,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Miyuki Kouda,鈴木 拓也,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,安田哲二","Electrical Properties of CeO2/La2O3 Stacked Gate Dielectrics Fabricated by Chemical Vapor Deposition and Atomic Layer Deposition",,"Japanese Journal of Applied Physics",,"Vol. 51",,"pp. 121101-1-121101-5,",2012,Dec.
"鈴木 拓也,Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Formation and electrical characterization of MgO - incorporated La2O3 gate insulators by ALD","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Miyuki Kouda,Kuniyuki KAKUSHIMA,パールハットアヘメト,HIROSHI IWAI,安田哲二","Comparative study of CeO2 gate dielectrics using chemical vapor deposition and atomic layer deposition","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"Miyuki Kouda,Kenji Ozawa,Kuniyuki KAKUSHIMA,Ahmet Parhat,HIROSHI IWAI,ト部友二,安田哲二","Preparation and Electrical Characterization of CeO2 Films for Gate Dielectrics Application: Comparative Study of Chemical Vapor Deposition and Atomic Layer Deposition Processes",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA06-1-4",2011,Oct.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La2O3 のALD成長のための原料選択：シクロペンタジエニル錯体とアミディネート錯体の比較","ゲートスタック研究会?材料･プロセス・評価の物理?（第16回研究会）",,,,,,2011,
"鈴木 拓也,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,安田哲二","ALDによるMgO添加La2O3ゲート絶縁膜の形成及び電気特性評価","第72回応用物理学会学術講演会",,,,,,2011,
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","La(iPrCp)3 を原料としたLa2O3のALD: Self-limiting 成長条件の明確化","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部 友二,安田 哲二","CVD法によるCeOx絶縁膜の作製と特性評価","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"小澤健児,幸田みゆき,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Self-limited growth of La oxides with ALD","複合創造領域シンポジウム",,,,,,2010,
"幸田みゆき,小澤健児,角嶋邦之,パールハットアヘメト,岩井洋,ト部友二,安田哲二","Electrical characterization of CVD deposited Ce oxides","複合創造領域シンポジウム",,,,,,2010,