"Junichi Hasegawa,Munetaka Noguchi,Masayuki Furuhashi,Shuhei Nakata,Takayuki Iwasaki,Tetsuo Kodera,Tadashi Nishimura,Mutsuko Hatano","Measurement of the SiO2/SiC interface state density in a wid energy-level range using capacitance transient spectroscopy","16th ICSCRM2015",,,,,,2015,Oct.
"二宮大,西村正,藤田英明,赤木泰文","高精度な電力変換回路設計用のSiC-MOSFET回路シミュレーションモデルの開発","半導体電力変換研究会","電気学会研究会資料","電気学会",,"no. SPC-15-007",,2015,Jan.
"岡本昌二,堀口剛司,冨永真志,西村正,藤田英明,赤木泰文,木ノ内伸一,大井健史","IGBT 物理モデルの負荷短絡保護回路への適用",,"電気学会論文誌D","電気学会","vol. 134","no. 10","pp. 853-862",2014,Oct.
"堀口 剛司,塚本 剛平,冨永 真志,西村 正,藤田 英明,赤木 泰文,木ノ内 伸一,大井 健史,小山 正人","物理モデルに基づく並列接続IGBT のPWM連続動作時における接合温度解",,"電気学会論文誌D","電気学会","vol. 134","no. 5","pp. 486-495",2014,May
"J.Hasegawa,K.Konishi,Y.Nakamura,K.Otsuka,S.Nakata,Y. Nakamine,T. Nishimura,M. Hatano","Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation",,"Materials Science Forum",,"Vol. 828",,"pp. 778-780",2014,Feb.
"J. Hasegawa,K.Konishi,Y.Nakamura,K.Otsuka,Y.Nakamine,T.Nishimura,M.Hatano","Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation","ICSCRM2013",,,,,,2013,Oct.
"岡本昌二,冨永真志,西村正,藤田英明,赤木泰文,堀口剛司,木ノ内伸一,大井健史","IGBT物理モデルによる短絡時のスイッチング動作解析","産業応用部門大会","電気学会 産業応用部門大会","電気学会","Vol. 1","no. 87","pp. 363-366",2013,Aug.
"塚本剛平,冨永真志,西村 正,藤田英明,赤木泰文","物?理?モ?デ?ル?に?基?づ?く?I?G?B?T?並?列?駆?動?時?に?お?け?る?接?合?温?度?解?析?","産業応用部門大会","電気学会 産業応用部門大会","電気学会","Vol. 1","no. 34",,2012,Aug.