"—ι–Ψ ‘ρ–η,‹v•Ϋ“c“§,Ahmet Parhat,HIROSHI IWAI","La2O3 gate insulators prepared by atomic layer deposition: Optimal growth conditions and MgO/La2O3 stacks for improved metal-oxide-semiconductor characteristics",,"Journal of Vacuum Science & Technology A",,"Vol. 30","No. 5","pp. 051507-1-8",2012,July
"ƒ}ƒCƒ}ƒCƒeƒB ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,‹v•Ϋ“c“§,ŠΦ‘ρ–η,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,•Π‰ͺD‘₯,ΌŽR²,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Oxide and interface trap densities estimation in ultrathin W/ La2O3/Si MOS capacitors",,"Microelectronics Reliability",,"Vol. 52","No. 6","pp. 1039-1042",2012,June
"—ˆŽR‘ε—S,‹v•Ϋ“c“§,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, gSilicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layerh, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA05-1-5",2011,Oct.
"—ˆŽR‘ε—S,‹v•Ϋ“c “§,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm","Taiwan-Japan Workshop on gNano Devicesh",,,,,,2011,
"‹v•Ϋ“c“§,Šp“ˆ–M”V,ƒp[ƒ‹ƒnƒbƒgƒAƒwƒƒg,“›ˆδˆκΆ,ΌŽR²,™ˆδM”V,–ΌŽζŒ€“ρ,•ž•”Œ’—Y,Šβˆδ—m","Spectroscopic analysis of interface state density in high-k/Si structure","•‘‡‘n‘’—ΜˆζƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2010,