"K. Tokimatsu,S. Murakami,T. Adachi,R. Ii,R. Yasuoka,M. Nishio","Long-term Demand and Supply of Non-ferrous Mineral Resources by a Mineral Balance Model",,"Mineral Economics",,"Vol. 30","No. 3","Page 193-206",2017,Oct.
"Kenichi Goto,Tatsuya Yamazaki,Yasuo Nara,Tetsu Fukano,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Ti Salicide Process for Sub-quarter-Micron CMOS Devices",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-77-C","No. 3","pp. 480-485",1994,Mar.
"Manabu Kojima,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques",,"IEICE TRANSACTIONS on Electronics","The Institute of Electronics, Information and Communication Engineers","Vol. E-76-C","No. 4","pp. 572-576",1993,Apr.
"Akira Sato,Youichi Momiyama,Yasuo Nara,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","A 0.5ƒÊm EEPROM Cell Using Poly-Si TFT Technology","Proc. 5lth Annual Device Research Conference","Proc. 5lth Annual Device Research Conference",,,,,1993,
"Tatsuya Yamazaki,Kenichi Goto,Tetsu Fukano,Yasuo Nara,Toshihiro Sugii,Takashi Ito","2l psec Switching 0.13ƒÊm-CMOS at Room Temperature Using High Performance Co Salicide Process","IEDM Dig. of Tech.","IEDM Dig. of Tech.",,,,"pp. 906-909",1993,
"Toshihiro Sugii,Tatsuya Yamazaki,Yoshihiro Arimoto,Takashi Ito,Yuji Furumura,Ikuo.Namura,Hiroshi Goto,Toshiya Tahara","SiC Growth and its Application  to High Speed Si-HBTs",,"Microelectronic Engineering","ELSEVIER","Vol. 19",,"pp. 335-342",1992,
"Atsushi Fukuroda,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Si Wafer Bonding with Ta Silicide Formation",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 30","No. 10A","pp. L1693-L1695",1991,Oct.
"Toshihiro Sugii,Tatsuya Yamazaki,Takashi Ito","Achieving High Current Gain and Low Emitter Resistance with the SiCx:F Widegap Emitter",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. 30","No. 6A","pp. L970-L972",1991,June
"Atsushi Fukuroda,Toru Miyabo,Manabu Kojima,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","Wafer Bonding and Thinning for High-Speed SOI Epitaxial-Base Transistor","Ext. Abst. of Int. Conf. on SSDM","Ext. Abst. of Int. Conf. on SSDM",,,,"pp. 168-169",1991,
"Takashi Ito,Toshihiro Sugii,Tatsuya Yamazaki","SiC(F) Hetero-Emitter and Epitaxial Base Bipolar Transistors","4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials","4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV- IV Materials",,,,,1991,
"Tatsuya Yamazaki,Itaru Namura,Toshihiro Sugii,Hiroshi Goto,Akinori Tahara,Takashi Ito","High Speed Si Hetero-Bipolar Transistor with a SiC Wide-gap Emitter and an Ultra-thin Heavily Doped Photoepitaxially Grown Base","Proc. IEEE 1991 Bipolar Circuits and Technology Meeting","Proc. IEEE 1991 Bipolar Circuits and Technology Meeting",,,,"pp. 71-74",1991,
"Naoshi Higaki,Tetsu Fukano,Atsushi Fukuroda,Toshihiro Sugii,Yoshihiro   Arimoto,Takashi Ito","A Thin-Base Lateral Bipolar Transistor Fabricated on   Bonded SOI","Dig. Tech. Papers of Symp. on VLSI Tech.","Dig. Tech. Papers of Symp. on VLSI Tech.",,,,"pp. 53-54",1991,
"Manabu Kojim,Atsushi Fukuroda,Tetsu Fukano,Naoshi Higaki,Tatsuya Yamazaki,Toshihiro Sugii,Yoshihiro Arimoto,Takashi Ito","High-Speed Epitaxial Base Transistors on Bonded SOI","IEEE 1991 ,Bipolar Circuits and Technology Meeting","IEEE 1991 ,Bipolar Circuits and Technology Meeting",,,,"pp. 63-66",1991,
"Toshihiro Sugii,Tatsuya Yamazaki,Takashi Ito","Si Hetero-Bipolar Transistor with a Fluorine Doped SiC Emitter and a Thin, Highly-Doped Epitaxial Base",,"IEEE Transactions on Electron Devices","IEEE Electron Devices Society?","Vol. ED-37","No. 11","pp. 2331-2335",1990,Nov.
"Toshihiro Sugii,Takayuki Aoyama,Takashi Ito","Low-Temperature Growth of SiC on Si by Gas-Source MBE",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 137","No. 3","pp. 989-992",1990,Mar.
"Toshihiro Sugii,Takayuki Aoyama,Yuji Furumura,Takashi Ito","SiC Growth   and Its Application to Si-HBTs","Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures","Proc. of American Vacuum Society Topical Symp. on Si Based Heterostructures",,,,"p. 124",1990,
"Toshihiro Sugii,Tatsuya Yamazaki,Takashi Ito","Process Technologies for    Advanced Si Bipolar Devices","Ext. Abst, of Int. Conf. on SSDM","Ext. Abst, of Int. Conf. on SSDM",,,,"pp. 817-818",1990,
"Takayuki Aoyama,Toshihiro Sugii,Takashi Ito","Determination of Band Line-up in ƒÀSiC/Si Heterojunction for Si-HBTs",,"Applied Surface Science","ELSEVIER","Vol. 41","No. 42","pp. 584-586",1989,Nov.
"Toshihiro Sugii,Takayuki Aoyama,Takashi Ito","Polycrystalline SiC for A Wide-Gap Emitter of Si-HBTs",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 136","No. 10","pp. 3111-3115",1989,Oct.
"Toshihiro Sugii,Tatsuya Yamazaki,Takashi Ito","Improved Current Gain in Bipolar Transistor with Bandgap Narrowing in Base",,"Electronics Letters","Institution of Engineering and Technology?","Vol. 25","No. 1","pp. 60-61",1989,May
"Toshihiro Sugii,Tatsuya Yamazaki,Kunihiro Suzuki,Tetsu Fukano,Takashi Ito","Si Hetero-Bipolar Transistor with an SiC Emitter and a Thin Epitaxial Base","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 659-662",1989,
"Toshihiro Sugii,Takashi Ito,Yuji Furumura,Toru Doki,Fumio Mieno,Mamoru Maeda","ƒÀ-SiC/Si Hetero Junction Bipolar Transistors with High Current Gain",,"IEEE Electron Device Letters","IEEE Electron Devices Society?","Vol. EDL-9","No. 2","pp. 87-89",1988,Feb.
"Toshihiro Sugii,Takashi Ito,Hajime Ishikawa","Low-Temperature Fabrication of Silicon Nitride Films by ArF Excimer Laser lrradiation",,"Japanese Journal of Applied Physics","The Japan Society of Applied Phisics","Vol. A","No. 46","pp. 249-253",1988,
"Takayuki Aoyama,Toshihiro Sugii,Takashi Ito","Determination of Band Lineup In ƒÀ-SiC/Si Hetero Junction for HBTs","Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces","Abs. 2nd Int. Conf. on Formation of Semiconductor Interfaces",,,,"p. 143",1988,
"Tetsuo Eshita,Kunihiro Suzuki,Toru Hara,Fumio Mieno,Yuji Furumura,Mamoru  Maeda,Toshihiro Sugii,Takashi Ito","Low-Temperature Heteroepitaxy of ƒÀ- SiC on Si(111) Substrates",,"Proc. MRS Symp.",,,,"pp. 357-362",1988,
"Toshihiro Sugii,Tatsuya Yamazaki,Tetsu Fukano,Takashi Ito","Epitaxially Grown Base Transistor for High-Speed Operation",,"Electron Device Letters, IEEE","IEEE Electron Devices Society","Vol. 8","No. 11","pp. 528-530",1987,Nov.
"Toshihiro Sugii,Takashi Ito,Yuji Furumura,Makoto Doki,Fumio Mieno,Mamoru Maeda","Si Heterojunction Bipolar Transistors with Single-Crystalline ƒÀ-SiC Emitters",,"Journal of The Electrochemical Society","The Electrochemical Society","Vol. 134","No. 10","pp. 2545-2549",1987,Oct.
"Tatsuya Yamazaki,Satoru Watanabe,Toshihiro Sugii,Takashi Ito","Ultra Shallow p+ /n Junction Formed by Photo-Enhanced Low-Temperature Epitaxy","Tech. Dig. of IEDM","Tech. Dig. of IEDM",,,,"pp. 586-589",1987,
"Toshihiro Sugii,Tatsuya Yamazaki,Tetsu Fukano,Takashi Ito","Thin-Base Bipolar Technology by Low-Temperature Photo-Epitaxy","Dig. of Symp. on VLSI Tech.","Dig. of Symp. on VLSI Tech.",,,,"pp. 35-36",1987,
"Toshihiro Sugii,Takashi Ito,Yuji Furumura,Mikio Doki,Fumio Mieno,Mamoru Maeda","Epitaxial SiC Emitter for High Speed Bipolar VLSI's","Dig. Symp. on VLSI Tech.","Dig. Symp. on VLSI Tech.",,,,"pp. 45-46",1986,
"Toshihiro Sugii,Takashi Ito,Hajime Ishikawa","Excimer Laser Enhanced  Nitridation of Silicon Substrates",,"Applied Phisics Letters","American Institute of Physics","Vol. 49","No. 9","pp. 966-968",1984,Nov.
"Toshihiro Sugii,Takashi Ito,Hajime Ishikawa","Low Temperature Nitridation of Silicon by Excimer Laser lrradiation","Ext. Abst. of 16th (1984 International Conf. on SSDM","Ext. Abst. of 16th (1984 International Conf. on SSDM",,,,"pp. 433-444",1984,