"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Makoto Hagiwara,Takahiro Urakabe,Shigeki Harada","Automated Flexible Modeling for Various Full-SiC Power Modules",,"IEEE Transactions on Power Electronics","IEEE","Vol. 38","Issue 5","pp. 6094-6107",2023,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching",,"IEEE Transactions on Industry Applications","IEEE","Vol. 58","No. 3","pp. 2978-2986",2022,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching","2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)",,,,,,2021,July
"中嶋純一,堀口剛司,浦壁隆浩,萩原誠","SiC-MOSFET, GaN-HEMTに適用可能なユニバーサルデバイスモデルの開発","令和3年電気学会全国大会",,,,"  4-001","pp. 1-2",2021,Mar.
"牛島和樹,葛本昌樹,萩原誠,滕飛,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-20-048",2020,Jan.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,堀口剛司,椋木康滋,地道拓志","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"滕飛,葛本昌樹,萩原誠,石井佑季,中嶋純一,椋木康滋,堀口剛司","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.
"Y. Mukunoki,K. Konno,T. Horiguchi,A. Nishizawa,M. Kuzumoto,M. Hagiwara,H. Akagi","An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation",,"IEEE Transactions on Power Electronics",,"Vol. 33","No. 11","pp. 9834-9842",2018,Nov.
"椋木康滋,堀口剛司,葛本昌樹,萩原誠,赤木泰文","SiC-MOSFETデバイスモデルの開発","平成30年電気学会産業応用部門大会",,,,"  7-1","pp. VII-1",2018,Aug.
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中武浩","SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析","平成30年電気学会全国大会",,,,"  4-112","pp. 181-182",2018,Mar.
"松尾翼,昆野賢太郎,葛本昌樹,萩原誠,赤木泰文,椋木康滋,堀口剛司,中山靖","双方向絶縁形DC-DCコンバータにおけるSiC-MOSFETのソフトスイッチング特性解析","平成29年電気学会産業応用部門大会",,,,"  1-134","pp. I-585-I-586",2017,Aug.
"岡本昌二,堀口剛司,冨永真志,西村正,藤田英明,赤木泰文,木ノ内伸一,大井健史","IGBT 物理モデルの負荷短絡保護回路への適用",,"電気学会論文誌D","電気学会","vol. 134","no. 10","pp. 853-862",2014,Oct.
"堀口剛司","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"堀口剛司","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"堀口剛司","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"堀口 剛司,塚本 剛平,冨永 真志,西村 正,藤田 英明,赤木 泰文,木ノ内 伸一,大井 健史,小山 正人","物理モデルに基づく並列接続IGBT のPWM連続動作時における接合温度解",,"電気学会論文誌D","電気学会","vol. 134","no. 5","pp. 486-495",2014,May
"岡本昌二,冨永真志,西村正,藤田英明,赤木泰文,堀口剛司,木ノ内伸一,大井健史","IGBT物理モデルによる短絡時のスイッチング動作解析","産業応用部門大会","電気学会 産業応用部門大会","電気学会","Vol. 1","no. 87","pp. 363-366",2013,Aug.
"塚本剛平,冨永真志,西村 正,藤田英明,赤木泰文,堀口剛司,木ノ内伸一,大井健史","物理モデルを用いた並列駆動IGBT連続動作時の接合温度解析?並列素子間の配線インダクタンス差の影響?","半導体電力変換研究会","電気学会研究会資料",,,"no. SPC-13-024","pp. 49-54",2013,Jan.