"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Jiangning Chen,Ž­ �‘‹­,Kuniyuki KAKUSHIMA,ƒp�[ƒ‹ƒnƒbƒgƒAƒwƒ�ƒg,•Ð‰ª�D‘¥,�¼ŽR�²,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of AlGaN/GaN HEMT with La-oxide gate dielectrics","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Ž­�‘‹­,‘å—ä—m,»ÞÃÞÊ»Ý ÀÞØÕ°¼Õ,Šp“ˆ–M”V,�¼ŽR�²,�™ˆä�M”V,•Ð‰ª�D‘¥,Žá—Ñ�®,“›ˆäˆê�¶,–¼ŽæŒ¤“ñ,Šâˆä—m","ALD‘Í�Ï�ðŒ�‚É‚æ‚éLa2O‚R/In0.53Ga0.47AsƒLƒƒƒpƒVƒ^‚Ì“d‹C“Á�«‚ւ̉e‹¿","‘æ74‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2013,