"T. Oishi,K. Hayashi,Y. Yamaguchi,H. Otsuka,K.  Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.