"Takashi Funakoshi,Hiroyuki Ryoson,Kosuke Suzuki,Katsunori Komehana,Tomoji Nakamura,Takayuki Ohba","9W/cm2/K Heat Transfer Coefficient Vapor Chamber for HPC Server Cooling Applications","2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)",,,,,,2023,Aug.
"Norio Chujo,Hiroyuki Ryoson,Koji Sakui,Shinji Sugatani,Tomoji Nakamura,Takayuki Ohba","Electrical and Thermal Analysis of Bumpless Build Cube 3D Using Wafer-on-Wafer and Chip-on-Wafer for Near Memory Computing","2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)",,"IEEE",,,,2023,Aug.
"Norio Chujo,Koji Sakui,Shinji Sugatani,Hiroyuki Ryoson,Tomoji Nakamura,Takayuki Ohba","Bumpless Build Cube (BBCube) 3D: Heterogeneous 3D Integration Using WoW and CoW to Provide TB/s Bandwidth with Lowest Bit Access Energy","2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)",,,,,,2023,July
"T. Kudo,Y. Satake,T. Funaki,N. Araki,Z. Chen,T. Nakamura,T. Ohba","Study of High-Speed Bonding Process with Thin Adhesive for Chiplet Heterogenous Integration","2023 International Conference on Electronics Packaging (ICEP)",,,,,,2023,May
"武山 真弓,鹿島 光司,中村 友二,大場 隆之","工学的立場からの農業支援の一端",,"電子情報通信学会論文誌 C",,"Vol. J106-C","No. 6","pp. 242-248",2023,Feb.
"大場隆之,中村友二","３次元集積化技術の現状と将来展望",,"応用物理","応用物理学会","Vol. 89","No. 2","pp. 75",2020,Feb.
"Yoriko Mizushima,Youngsuk Kim,Tomoji Nakamura,Akira Uedono,Takayuki Ohba","Behavior of copper contamination on backside damage for ultra-thin silicon three dimensional stacking structure",,"Microelectronic Engineering","ELSEVIER","Vol. 167",,"pp. 23-31",2017,Jan.
"Aki Dote,Hideki Kitada,Yoriko Mizushima,Tomoji Nakamura,Seiki Sakuyama","Characterization of Warpages and Layout-Dependent Local-Deformations for Large Die 3D Stacking","2016 IEEE 66th Electronic Components and Technology Conference","Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th","IEEE",,,"pp. 1899",2016,June
"Y. S. Kim,S. Kodama,Y. Mizushima,T. Nakamura,N. Maeda,K. Fujimoto,A. Kawai,T. Ohba","Warpage-free Ultra-Thinning ranged from 2 to 5-μm for DRAM Wafers and Evaluation of Devices Characteristics","2016 IEEE 66th Electronic Components and Technology Conference","Electronic Components and Technology Conference (ECTC), 2016 IEEE 66th","IEEE",,,"pp. 1471-1476",2016,June
"Dote Aki,Kitada Hideki,Mizushima Yoriko,Nakamura Tomoji,Sakuyama Seiki","Analyzing and modeling methods for warpages of thin and large dies with redistribution layer",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 55","No. 6",,2016,May
"小林 靖志,中田 義弘,中村 友二,武山 眞弓,佐藤 勝,野矢 厚","3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価",,"電気学会論文誌. C","The Institute of Electrical Engineers of Japan","Vol. 135","No. 7","pp. 733-738",2015,July
"Imada Tadahiro,Nakata Yoshihiro,Ozaki Shiro,Kobayashi Yasushi,Nakamura Tomoji","Systematic investigation of silylation materials for recovery use of low-k material plasma damage",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 54","No. 7",,2015,June
"神吉 剛司,池田 淳也,中田 義弘,谷 元昭,中村 友二","半導体プロセスを応用した高信頼性微細配線技術の開発",,"エレクトロニクス実装学会誌","The Japan Institute of Electronics Packaging","Vol. 18","No. 6","pp. 435-442",2015,June
"Hisashi Sato,Nobuyuki Shishido,Shoji Kamiya,Kozo Koiwa,Masaki Omiya,Masahiro Nishida,Takashi Suzuki,Tomoji Nakamura,Takeshi Nokuo","Local distribution of residual stress of Cu in LSI interconnect",,"MaterialsLetters",,"Volume 136",,"Page 362-365",2014,Dec.
"Chuantong Chen,Kozo Koiwa,Nobuyuki Shishido,Shoji Kamiya,Masaki Omiya,Hisashi Sato,Masahiro Nishida,Takashi Suzuki,Tomoji Nakamura,Takeshi Nokuo,Tadahiro Nagasawa","Specimen size effect on elastic-plastic strength evaluation of interface between thin films",,"Eng. Fract. Mech.",,"Vol. 131",,"pp. 371-381",2014,Sept.
"Chuantong Chen,Nobuyuki Shishido,Shoji Kamiya,Kozo Koiwa,Hisashi Sato,Masaki Omiya,Masahiro Nishida,Takashi Suzuki,Tomoji Nakamura,Takeshi Nokuo,Toshiaki Suzuki","Evaluation for interface strength fluctuations induced by inhomogeneous grain structure of Cu line in LSI Interconnects",,"Microelectronic Engineering","Elsevier","Volume 120",,"Page 52-58",2014,May
"中村 友二","LSIの配線技術と表面科学",,"表面科学","The Surface Science Society of Japan","Vol. 35","No. 5","pp. 236-243",2014,May
"Nobuyuki Shishido,Yuka Oura,Hisashi Sato,Shoji Kamiya,Kozo Koiwa,Masaki Omiya,Masahiro Nishida,Takashi Suzuki,Tomoji Nakamura,Takeshi Nokuo,Toshiaki Suzuki","Crystal orientation effect on local adhesion strength of the interface between a damascene copper line and the insulation layer",,"Microelectronic Engineering","Elsevier","Volume 120",,"Page 71-76",2014,May
"Mizushima Yoriko,Kim Youngsuk,Nakamura Tomoji,Sugie Ryuichi,Hashimoto Hideki,Uedono Akira,Ohba Takayuki","Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration",,"Jpn. J. Appl. Phys.","Institute of Physics","Vol. 53","No. 5",,2014,Apr.
"Mayumi B. Takeyama,Masaru Sato,Yoshihiro Nakata,Yasushi Kobayashi,Tomoji Nakamura,Atsushi Noya","Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at Low temperatures",,"Japanese Journal of Applied Physics","Institute of Physics","Volume 53",,,2014,Apr.
"Noriyuki Taoka,Osamu Nakatsuka,Yoriko Mizushima,Hideki Kitada,Young Suk Kim,Tomoji Nakamura,Takayuki Ohba,Shigeaki Zaima","Observation of lattice spacing fluctuation and strain undulation around through-Si vias in wafer-on-wafer structures using X-ray microbeam diffraction",,"Japanese Journal of Applied Physics",,"Volume 53",,,2014,Apr.
"Akira Uedono,Yoriko Mizushima,Youngsuk Kim,Tomoji Nakamura,Takayuki Ohba,Nakaaki Yoshihara,Nagayasu Oshima,Ryoichi Suzuki","Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic",,"Journal of Applied Physics","AIP","Vol. 116","  134501",,2014,
"神吉 剛司,池田 淳也,須田 章一,小林 靖志,中田 義弘,中村 友二","3D/2.5D-IC向けチップ間接続配線の高信頼性を実現するバリア技術 (次世代電子機器を支える三次元積層技術と先端実装の設計・評価技術論文特集)",,"電子情報通信学会論文誌. C, エレクトロニクス","一般社団法人電子情報通信学会","Vol. 96","No. 11","pp. 379-386",2013,Nov.
"中村友二","表面改質技術?現状と今後の展開",,"応用物理",,"Volume 82","No. 5","pp. 236-243",2013,May
"中村 友二,鈴木 貴志","LSI多層配線の信頼性",,"応用物理",,"Volume 78","No. 9","Page 873-877",2009,Sept.