"Y. Ito,S. Tamai,T. Hoshi,T. Gotow,Y. Miyamoto","Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers",,"JPN. J. APPL. PHYS.",,"vol. 62","no. SC","  SC1048",2023,Feb.
"T. Gotow,T. Arai,T. Aota,Y. Miyamoto","Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs","Compound Semiconductor Week",,,,,,2022,June
"宮本恭幸,後藤高寛","GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算",,"電気学会論文誌C","電気学会","Vol. 142","No. 3","pp. 348-353",2022,Mar.
"新井貴大,青田智也,眞壁勇夫,中田健,後藤高寛,宮本恭幸","N極性GaN HEMTのTMAHによる素子分離","第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"Tomimasa Go,M. Kitamura,T. Gotow,Y. Miyamoto","PMA Evaluation of TiN ALD in InGaAs Nanosheet MOSFETs","International Microprocesses and Nanotechnology Conference",,,,,,2021,Oct.
"T. Gotow,Tatsushi Suka,Y. Miyamoto","Comparative study of breakdown and interface properties of gate insulator on N-polar and Ga-polar GaN MIS capacitor","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"後藤高寛,須賀達士,宮本恭幸","N極性およびGa極性GaN MIS構造の界面特性の比較検討","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"Y. Miyamoto,T. Gotow","Proposal of breakdown voltage control of GaN HEMT by interface charge","Compound Semiconductor Week 2021",,,,,,2021,May
"T. Aota,A. Hayasaka,I. Makabe,S. Yoshida,T. Gotow,Y. Miyamoto","Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction",,"Japanese Journal of Applied Physics",,"  60","  SCCF06",,2021,Mar.
"宮本恭幸,後藤高寛","界面電荷量によるGaN HEMTの耐圧制御の提案","電子デバイス研究会",,,,,,2021,Mar.
"Tomoya Aota,Akihiro Hayasaka,isao makabe,Shigeki Yoshida,Takahiro Gotow,YASUYUKI MIYAMOTO","Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction","33rd International Microprocesses and Nanotechnology Conference (MNC 2020)",,,,,,2020,Nov.
"Manabu Mitsuhara,Takahiro Gotow,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates",,"Journal of Crystal Growth",,"  555","  125970",,2020,Nov.
"青田 智也,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造での無電極PECエッチング","第81回 応用物理学会秋季学術講演会",,,,,,2020,Sept.
"Yasuyuki Miyamoto,Takahiro Gotow","Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer",,"IEICE Transactions on Electronics",,"Vol. 103.C",,"Page 304-307",2020,June
"毛利 匡裕,早坂 明泰,眞壁 勇夫,吉田 成輝,後藤 高寛,宮本 恭幸","N極性GaN HEMT構造におけるコンタクト抵抗の低減","第67回 応用物理学会 春季学術講演会",,,,,"  12p-B401-12",2020,Mar.
"大澤幸希,岩木拓也,遠藤勇輝,平岡瑞穂,岸本尚之,林拓也,渡邊一世,山下良美,原紳介,後藤高寛,笠松章史,遠藤聡,藤代博記","歪AlInSb/AlInSbステップバッファを用いたGaInSb n-チャネルHEMT","電子デバイス研究会 テラヘルツ応用システム研究会",,,,,,2019,Dec.
"T. Gotow,M. Mitsuhara,T. Hoshi,H. Sugiyama,M. Takenaka,S. Takagi","Performance enhancement of p-GaAsSb/InGaAs hetero-junction vertical TFETs by using abrupt source impurity profile",,"Journal of Applied Physics",,"  126","  214502",,2019,Dec.
"岩木拓也,遠藤勇輝,平岡瑞穂,岸本尚之,林拓也,渡邊一世,山下良美,原紳介,後藤高寛,笠松章史,遠藤聡,藤代博記","歪Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いたGaInSb n-チャネルHEMT",,"信学技報",,"vol. 119","no. 353","pp. 29-32",2019,Dec.
"M. Hiraoka,Y. Endoh,K. Osawa,N. Kishimoto,T. Hayashi,R. Machida,I. Watanabe,Y. Yamashita,S. Hara,T. Gotow,A. Kasamatsu,A. Endoh,H. I. Fujishiro","Improved Electron Transport Properties of GaInSb Quantum Well Channel Using Strained-AlInSb/AlInSb Stepped Buffer",,"Physica status solidi A",,"  1900516",,,2019,Oct.
"S. Takagi,K. Kato,D. H. Ahn,T. Gotow,R. Takaguchi,T.-E. Bae,K. Toprasertpong,M. Takenaka","Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits","236th Electrochemical Society (ECS) Meeting",,,,,,2019,Oct.
"S. Takagi,K. Kato,D. H. Ahn,T. Gotow,R. Takaguchi,T.-E. Bae,K. Toprasertpong,M. Takenaka","Tunneling FET Device Technology for Ultra-Low power integrated Circuits",,"ECS Transactions",,"  92","  4","  59-69",2019,Oct.
"平岡 瑞穂,遠藤 勇輝,岸本 尚之,林 拓也,剣持 雄太,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いた歪Ga1-xInxSb量子井戸チャネルの電子輸送特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"岸本 尚之,熊坂 昂之輔,遠藤 勇輝,林 拓也,平岡 瑞穂,白井 脩策,吉田 直史,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,藤代 博記,遠藤 聡","チャネルスケーリングがSb系HEMT構造の電子輸送特性に及ぼす影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"林 拓也,大坪 拓史,岸本 尚之,遠藤 勇輝,平岡 瑞穂,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","歪超格子バッファがInSb HEMTの表面形態と電気的特性に与える影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"平岡 瑞穂,遠藤 勇輝,大澤 幸希,岸本 尚之,林 拓也,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","歪Al0.40In0.60Sb/Al1-yInySbステップバッファを用いたGa1-xInxSb量子井戸チャネルの電子輸送特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"K. Osawa,T. Iwaki,Y. Endoh,M. Hiraoka,N. Kishimoto,T. Hayashi,I. Watanabe,Y. Yamashita,S. Hara,A. Kasamatsu,T. Gotow,A. Endoh,H. I. Fujishiro","GaInSb n-Channel HEMTs with High AlInSb Barrier","13th Topical Workshop on Heterostructure Microelectronics",,,,,,2019,Aug.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers",,"Journal of Applied Physics",,"  125","  214504",,2019,June
"高木信一,加藤公彦,安大煥,後藤高寛,松村亮,高口遼太郎,竹中充","材料エンジニアリングによるトンネル電界効果トランジスタの高性能化",,"電子情報通信学会論文誌 C",,"Vol. 102-C","No. 3","pp. 61-69",2019,Mar.
"満原学,星拓哉,杉山弘樹,後藤高寛,竹中充,高木信一","InP基板上引張歪GaAsSbとInGaAsの膜厚増加による結晶性劣化の比較","第66回応用物理学会春季学術講演会",,,,,,2019,Mar.
"Masachi Yamaguchi,Takahiro Gotow,Mitsuru Takenaka,Shinichi Takagi","Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators",,"Japanese Journal of Applied Physics",,"  58","  SBBA15",,2019,Mar.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","Al2O3/GaSb MOS界面構造における絶縁膜堆積前処理の検討","第61回 応用物理学会春季学術講演会",,,,,,2019,
"Shinichi Takagi,Kimihiko Kato,Wukang Kim,Kwangwon Jo,Ryo Matsumura,Ryotaro Takaguchi,Daehwan Ahn,Takahiro Gotow,Mitsuru Takenaka","MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI","48th European Solid-State Device Research Conference (ESSDERC)",,,,,,2018,Sept.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Improvement of ION and S.S. values of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical TFETs by using abrupt source impurity profile","International Conference on Solid State Devices and Materials (SSDM)",,,,,,2018,Sept.
"Masashi Yamaguchi,Takahiro Gotow,Munetaka Noguchi,Mitsuru Takenaka,Shinichi Takagi","Performance enhancement of Si MOSFETs using anti-ferroelectric thin films as gate insulators","International Conference on Solid State Devices and Materials (SSDM)",,,,,,2018,Sept.
"Shinichi Takagi,Kimihiko Kato,Ryotaro Takaguchi,Taeeon Bae,Daehwan Ahn,Takahiro Gotow,Mitsuru Takenaka","Tunneling MOSFET technology for ultra-low power integrated system","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2018)",,,,,,2018,July
"Shinichi Takagi,Daehwan Ahn,Takahiro Gotow,Chiaki Yokoyama,Chih-Yu Chang,Kiyoshi Endo,Kimihiko Kato,Mitsuru Takenaka","Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs",,"ECS Transactions",,"  85","  8","  27-37",2018,May
"山口大志,後藤高寛,竹中充,高木信一","反強誘電体薄膜をゲート絶縁膜に用いたMOSFETの電気特性","第65回 応用物理学会春季学術講演会",,,,,,2018,Mar.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors",,"Journal of Applied Physics",,"  122","  174503",,2017,Nov.
"Shinichi Takagi,Daehwan Ahn,Munetaka Noguchi,Sanghee Yoon,Takahiro Gotow,Kouichi Nishi,Minsoo Kim,Taeeon Bae,Takumi Katoh,Ryo Matsumura,Ryotaro Takaguchi,Mitsuru Takenaka","(invited) Low Power Tunneling FET Technologies Using Ge/IIIV Materials","232nd Electrochemical Society (ECS) Meeting",,,,,,2017,Oct.
"Shinichi Takagi,Daehwan Ahn,Munetaka Noguchi,Sanghee Yoon,Takahiro Gotow,Kouichi Nishi,Minsoo Kim,Taeeon Bae,Takumi Katoh,Ryo Matsumura,Ryotaro Takaguchi,Mitsuru Takenaka","Low power Tunneling FET technologies using Ge/III-V materials",,"ECS Transactions",,"  80","  4","  115-124",2017,Oct.
"Shinichi Takagi,Mengnan Ke,Chih-Yu Chang,Chiaki Yokoyama,Masafumi Yokoyama,Takahiro Gotow,Koichi Nishi,Sanghee Yoon,Mitsuru Takenaka","(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks","232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors",,,,,,2017,Oct.
"Shinichi Takagi,Mengnan Ke,Chih-Yu Chang,Chiaki Yokoyama,Masafui Yokoyama,Takahiro Gotow,Kouichi Nishi,Sanghee Yoon,Mitsuru Takenaka","MOS interface defect control in Ge/III-V gate stacks",,"ECS Transactions",,"  80","  4","  109-118",2017,Oct.
"Takahiro Gotow,Sachie Fujikawa,Hiroki Fujishiro,Mutsuo Ogura,W. H. Chang,Tetsuji Yasuda,Tatsuro Maeda","Surface cleaning and pure nitridation of GaSb by in-situ plasma processing",,"AIP Advances",,"  7","  105117",,2017,Oct.
"Shinichi Takagi,Daehwan Ahn,Takahiro Gotow,Kouichi Nishi,Taeeon Bae,Takumi Katoh,Ryo Matsumura,Ryotaro Takaguchi,Kimihiko Kato,Mitsuru Takenaka","III-V/Ge-based tunneling MOSFET","2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S)",,,,,,2017,Oct.
"Shinichi Takagi,Daehwan Ahn,Takahiro Gotow,Munetaka Noguchi,Kouichi Nishi,SangHyeon Kim,Masafumi Yokoyama,Chih-Yu Chang,Sanghee Yoon,Chiaki Yokoyama,Mitsuru Takenaka","III-V-based low power CMOS devices on Si platform","IEEE International Conference on Integrated Circuit Design & Technology (ICICDT)",,,,,,2017,May
"後藤高寛,満原学,星拓也,杉山弘樹,竹中充,高木信一","ソース不純物濃度がGaAsSb/InGaAs 縦型トンネルFETの電気特性に与える影響","第64回 応用物理学会春季学術講演会",,,,,,2017,Mar.
"後藤高寛,満原学,星拓也,杉山弘樹,竹中充,高木信一","極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価","電子デバイス界面テクノロジー研究会",,,,,,2017,Jan.
"高木信一,安大煥,野口宗隆,後藤高寛,西康一,金閔洙,竹中充","Ge/?-? 族半導体を用いたトンネル FET 技術",,"電子情報通信学会研究報告 信学技報",,"vol. 116","no. 448","pp. 5-8",2017,Jan.
"高木信一,安大煥,野口宗隆,後藤高寛,西康一,金閔洙,竹中充","Ge/III-V 族化合物半導体を用いたトンネルFET技術","電子情報通信学会 SDM研究会・応用物理学会シリコンテクノロジー分科会研究会 「先端CMOSデバイス・プロセス技術(IEDM特集)」",,,,,,2017,Jan.
"Shinichi Takagi,Daehwan Ahn,Munetaka Noguchi,Takahiro Gotow,Kouichi Nishi,Minsoo Kim,Mitsuru Takenaka","Tunneling MOSFET technologies using III-V/Ge materials","International Electron Device Meeting (IEDM)",,,,,,2016,Dec.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Improvement of GaAsSb MOS interface properties by using ultrathin InGaAs interfacial layers","47th IEEE Semiconductor Interface Specialists Conference (SISC)",,,,,,2016,Dec.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Effects of impurity and composition profile steepness on electrical characteristics of GaAsSb/InGaAs heterojunction TFETs","International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"後藤高寛,満原学,星拓也,杉山弘樹,竹中充,高木信一","極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価","第77回 応用物理学会秋季学術講演会",,,,,,2016,Sept.
"後藤高寛,満原学,星拓也,杉山弘樹,竹中充,高木信一","GaAsSb/InGaAs 縦型トンネルFETの動作実証","第63回 応用物理学会春季学術講演会",,,,,,2016,Mar.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","GaSb表面の純窒化プロセスの検討","第62回 応用物理学会春季学術講演会",,,,,,2015,Mar.
"Takahiro Gotow,Sachie Fujikawa,Hiroki Fujishiro,Mutsuo Ogura,Tetsuji Yasuda,Tatsuro Maeda","Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal?oxide?semiconductor structures",,"Japanese Journal of Applied Physics",,"  54","  21201",,2015,Jan.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","窒素プラズマ処理を施したAl2O3/GaSb MOS構造の特性評価","第75回 応用物理学会秋季学術講演会",,,,,,2014,Sept.
"Takahiro Gotow,Sachie Fujikawa,Hiroki Fujishiro,Mutsuo Ogura,Tetsuji Yasuda,Tatsuro Maeda","Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates","44th IEEE Semiconductor Interface Specialists Conference (SISC)",,,,,,2013,Dec.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","GaSbショットキー接合型メタルS/D pMOSFETsの動作実証","第74回 応用物理学会秋季学術講演会",,,,,,2013,Sept.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","真空アニール法がAl2O3/GaSb MOS界面に与える影響","電子デバイス研究会",,,,,,2013,Aug.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","真空アニール法がAl2O3/GaSb MOS界面に与える影響",,"電子情報通信学会技術研究報告 信学技報",,"vol. 113","no. 176","pp. 37-42",2013,Aug.
"後藤高寛,原紳介,藤代博記,小倉睦郎,安田哲二,前田辰郎","GaAs上GaSb MOS構造の作製","第60回応用物理学会春季学術講演会",,,,,,2013,Mar.