"An Li,Takuya Hoshii,Kazuo Tsutsui,Hitoshi Wakabayashi,Kuniyuki Kakushima","Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma",,"Japanese Journal of Applied Physics",,"Volume 63","Number 6","  066503",2024,June