"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"大澤 一斗,野口 真司,祢津 誠晃,木瀬 信和,宮本 恭幸","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"大澤一斗,野口真司,祢津誠晃,木瀬信和,宮本恭幸","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.