"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Yuta Yokomura,Nobuhiko Nishiyama,Shigehisa Arai","Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °C",,"Japanese Journal of Applied Physics","Japanese Applied Physics Society","Vol. 59","Number 4","p. 042003",2020,Apr.
"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Nobuhiko Nishiyama,SHIGEHISA ARAI","Continuous wave operation up to 90°C of npn-AlGaInAs/InP transistor laser","Photonic Device Workshop",,"電子情報通信学会",,,,2018,Dec.
"Yusei Goto,Shoichi Yoshitomi,Kentarou Yamanaka,Nobuhiko Nishiyama,SHIGEHISA ARAI","Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser",,,,,,,2018,Oct.
"吉冨翔一,山中健太郎,後藤優征,西山伸彦,荒井滋久","1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの高温連続動作","2018年電子情報通信学会ソサイエティ大会",,,,,,2018,Sept.
"後藤優征,吉冨翔一,山中健太郎,西山伸彦,荒井滋久","キャリア変動による利得特性変化を考慮した電圧変調 1.3 μm帯npn-AlGaInAs/InP トランジスタレーザの大信号解析",,,,,,,2018,Sept.
"Shoichi Yoshitomi,Kentarou Yamanaka,Yusei Goto,Nobuhiko Nishiyama,SHIGEHISA ARAI","90 ℃ CW operation of  1.3-?m wavelength npn-AlGaInAs/InP transistor lasers by thick and wide base-electrode","26th International Semiconductor Laser Conference (ISLC 2018)",,,,"No. MC2",,2018,Sept.
"吉冨翔一,山中健太郎,後藤優征,藤本直,西山伸彦,荒井滋久","GRIN-SCH構造を有する1.3 ?m帯npn-AlGaInAs/InP トランジスタレーザの静特性","電子情報通信学会 2018年総合大会",,,,,,2018,Mar.
"後藤優征,山中健太郎,吉冨翔一,西山伸彦,荒井滋久","1.3-?m帯npn-AlGaInAs/InP トランジスタレーザにおける 電気的応答を考慮した大信号特性の解析","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.