"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"大澤一斗,加藤淳,佐賀井健,金澤徹,上原英治,宮本恭幸","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"佐賀井 健,上原 英治,大澤 一斗,宮本 恭幸","n-InP ソースを持つT ケ?ート構造 InGaAs-MOSFET の高周波特性","2013年電子情報通信学会総合大会",,,,,,2013,Mar.
"佐賀井健,米内義晴,宮本恭幸","InGaAs チャネル MOSFET の EOT 削減による 伝達コンタ?クタンス向上","第 73 回応用物理学会学術講演会",,,,,,2012,Sept.
"Y. Yamaguchi,T. Sagai,Y. Miyamoto","Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process","9th Topical Workshop on Heterostructure Materials",,,,,,2011,Sept.
"山口裕太郎,佐賀井健,宮本恭幸","基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製","第58回応用物理学会関係連合講演会",,,,,,2011,Apr.