"Eisuke Tokumitsu,Etsu Shin,Hiroshi Shibata","Asymmetry of switching time in oxide-channel ferroelectric-gate thin film transistors","E-MRS 2013 SPRING MEETING",,,,,,2013,May
"徳光永輔,柴田宏,大岩朝洋,近藤洋平","強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ",,"信学技報、SDM2008-11、OME2008-11(2008-4)","電子情報通信学会","Vol. 108","No. 1","pp. 51-56",2008,Apr.
"柴田宏,大岩朝洋,徳光永輔","酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価",,"信学技報、SDM2007-274(2008-03)","電子情報通信学会","Vol. 107","No. 549","pp. 7-12",2008,Mar.
"柴田宏,大岩朝洋,徳光永輔","酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用","第５５回 応用物理学関係連合会講演会","第５５回 応用物理学関係連合会講演会 講演予稿集",,,"No. 30a-P14-29",,2008,Mar.
"柴田宏,大岩朝洋,徳光永輔","酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性","電子情報通信学会2008年総合大会",,,,,,2008,Mar.
"E.Tokumitsu,H.Shibata,M.Senoo","Nonvolatile memory operetaion of ferroelectric-gate thin film transistors using oxide channel","the 14th International Workshop on Oxide Electronics(WOE14)",,,,"No. P?-06-124",,2007,Oct.
"E.Tokumitsu,Y.Takano,H.Shibata,H.Saiki","Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer",,"Journal of Microelectronic Engineering",,"Vol. 84",,"pp. 2018-2021",2007,June
"高野 友一,斎木博和,柴田宏,徳光永輔","金属／絶縁体／強誘電体／絶縁体／半導体構造（M-I-FIS構造）キャパシタの作製と評価","第54回応用物理学関係連合講演会",,,,"No. 29a-SV-4",,2007,Mar.