"Jinhan Song,Atsuhiro Ohta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30901",2021,Feb.
""Atsuhiro Ohta,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima"","Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics","Electrochemical Society (ECS) PRIME 2020",,,,,,2020,Oct.
"‘v ƒWƒ“ƒnƒ“,‘พ“c “ีไ,ฏˆไ ‘๑–็,Žแ—ั ฎ,“›ˆไ ˆ๊ถ,Šp“ˆ –M”V","Y2O3/SiO2ฯ‘w\‘ข‚ฬโ‰–Œ‚๐—p‚ข‚ฝMOS capacitor‚ฬ“มซ•]‰ฟ","‘ๆ80‰๑‰ž—p•จ—Šw‰๏H‹GŠwpu‰‰‰๏",,,,,,2019,Sept.
"‘พ“c “ีไ,‘v ?Šฟ,ฏˆไ ‘๑–็,Žแ—ั ฎ,“›ˆไ ˆ๊ถ,Šp“ˆ –M”V","ŒดŽq‘w‘อฯ–@‚๐—p‚ข‚ฝƒCƒbƒgƒŠƒEƒ€ƒVƒŠƒP[ƒg”––Œ‚ฬŒ`ฌ","‘ๆ80‰๑‰ž—p•จ—Šw‰๏H‹GŠwpu‰‰‰๏",,,,,,2019,Sept.