"Eisuke Tokumitsu,Tomohiro Oiwa","Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors",,"Mater. Res. Soc. Symp. Proc.",,"Vol. 1250","  1250-G13-07","pp. 145-150",2010,Aug.
"Eisuke Tokumitsu,Youhei Kondo,Tomohiro Oiwa","Preparation of Bi-Zn-Nb-O(BZN)High-K Gate insulator by Sputtering for Oxide Channel Thin Film Transistors","16th Workshop on Dielectrics in Microelectronics(WoDiM 2010)",,,,,,2010,June
"Eisuke Tokumitsu,Ken-ichi Haga,Tomohiro Oiwa","Fabrication of IGZO and In2O3-Channel Ferroelectric-Gate Thin Film Transistors","2010 MRS Spring meeting, Materials Research Society",,,,,,2010,Apr.
"羽賀健一,大岩朝洋,徳光永輔","IGZOおよびIn2O3をチャネルに用いた強誘電体ゲートTFTの作製","薄膜材料デバイス研究会 第六回研究集会",,,,"  3P40",,2009,Nov.
"E. Tokumitsu,T. Oiwa","Fabrication of In-Ga-Zn-O channel thin film transistors with high-k and ferroelectric gate insulators","23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23)",,,,,,2009,Aug.
"近藤洋平,大岩朝洋,羽賀健一,徳光永輔","Bi1.5Zn1.0b1.5O7をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタの作製","第５６回 応用物理学関係連合会講演会","第５６回 応用物理学関係連合会講演会",,,"  31p-ZH-12/?",,2009,Mar.
"Eisuke Tokumitsu,Tomohiro Oiwa","Transmission Electron Microscope Observation of ITO/(Bi,La)4Ti3O12 TFT Structures","International Thin Film Transistor Conference","The Proceedings of the 5th International thin Transistor Conference",,,,"pp. 177-179",2009,Mar.
"Tomohiro Oiwa,Youhei Kondo,Mitsuru Nakata,Eisuke Tokumitsu","Fabrication of IGZO Channel Thin Film Transistor with BZN Gate Insulator","2008 Fall Meeting, Materials Research Society",,,,,"  Paper. B10.3",2008,Dec.
"大岩朝洋,近藤洋平,中田充,徳光永輔","強誘電体・高誘電率材料をゲート絶縁膜に用いたIGZOチャネル薄膜トランジスタの作製と評価","第69回応用物理学会学術講演会","2008年秋季 第69回応用物理学会学術講演会 講演予稿集",,,,"  3a-K-9",2008,Sept.
"Eisuke Tokumitsu,Tomohiro Oiwa,Yohei Kondo,Masaru Senoo","All-Oxide Transparent Thin Film Transistors with and without Nonvolatile Memory Function","15th Workshop on Dielectrics in Microelectronics(WoDiM 2008)",,,,,,2008,June
"徳光永輔,柴田宏,大岩朝洋,近藤洋平","強誘電体および高誘電率材料をゲート絶縁膜に用いた酸化物チャネル薄膜トランジスタ",,"信学技報、SDM2008-11、OME2008-11(2008-4)","電子情報通信学会","Vol. 108","No. 1","pp. 51-56",2008,Apr.
"柴田宏,大岩朝洋,徳光永輔","酸化物半導体InGaZnO膜の強誘電体ゲート薄膜トランジスタへの適用","第５５回 応用物理学関係連合会講演会","第５５回 応用物理学関係連合会講演会 講演予稿集",,,"No. 30a-P14-29",,2008,Mar.
"柴田宏,大岩朝洋,徳光永輔","酸化物チャネル強誘電体ゲートトランジスタにおけるメモリ特性","電子情報通信学会2008年総合大会",,,,,,2008,Mar.
"柴田宏,大岩朝洋,徳光永輔","酸化物チャネル強誘電体ゲート不揮発性メモリ素子の作製と評価",,"信学技報、SDM2007-274(2008-03)","電子情報通信学会","Vol. 107","No. 549","pp. 7-12",2008,Mar.