"田辺悟,西尾礼,小林由貴,根本幸祐,宮本智之","Si基板上へのGaNP層及びInAs系量子ドット成長の検討","電子情報通信学会レーザ・量子エレクトロニクス研究会(LQE)",,,,,,2010,Nov.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD 成長GaInNAs バッファ上InAs/GaAs 量子ドットの水素パッシベート効果","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"西尾礼,田辺悟,根本幸祐,鈴木亮一郎,宮本智之","MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善","第29回電子材料シンポジウム",,,,,,2010,July
"田辺 悟,西尾礼,鈴木亮一郎,根本幸祐,宮本智之","MOCVD 法によるSi 基板上及びGaP 基板上InAs 量子ドットの成長特性","第29回電子材料シンポジウム (EMS-29)",,,,,,2010,July
"Rei Nishio,Satoru Tanabe,Ryoichiro Suzuki,Kosuke Nemoto,Tomoyuki Miyamoto","Reduction of surface roughness of GaP on Si substrate using strained GaInP interlayer by MOCVD","2010 International Conference on Indium Phosphide and Related Materials",,,,,,2010,May
"Satoru Tanabe,Ryoichiro Suzuki,Kosuke Nemoto,Rei Nishio,Tomoyuki Miyamoto","InAs QDs grown on GaP buffer layer on Si substrate","The 37th International Symposium on Compound Semiconductors",,,,,,2010,May
"田辺悟,鈴木亮一郎,根本幸祐,西尾礼,宮本智之","Si基板上GaP上へのInAs量子ドット成長","第57回応用物理学関連連合講演会",,,,,,2010,Mar.
"西尾礼,田辺悟,根本幸祐,鈴木亮一郎,宮本智之","MOCVD法によるSi基板上GaP成長における歪GaInP中間層を用いた表面ラフネスの改善","第57回応用物理学関連連合講演会",,,,,,2010,Mar.
"根本幸祐,鈴木亮一郎,仙石知行,田辺悟,西尾礼,小山二三夫,宮本智之","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの熱アニール特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"田辺悟,鈴木亮一郎,仙石知行,根本幸祐,西尾礼,宮本智之","MOCVD成長によるSi上GaPの表面モフォロジーの成長条件依存性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satoru Tanabe,Rei Nishio,Fumio Koyama","InAs quantum dots on GaInNAs buffer layer","36th International Symposium on Compound Semiconductors",,,,,"pp. 133-134",2009,Aug.
"田辺 悟,鈴木 亮一郎,仙石 知行,根本 幸祐,宮本 智之","Characterization of InAs QDs on a thin GaPN buffer layer by MOCVD","第28回電子材料シンポジウム",,,,,,2009,July
"根本 幸祐,鈴木 亮一郎,仙石 知行,田辺 悟,小山 二三夫,宮本 智之","InAs quantum dots on GaInNAs buffer layer","第28回電子材料シンポジウム",,,,,,2009,July
"Tomoyuki Sengoku,Ryoichiro Suzuki,Kosuke Nemoto,Satoru Tanabe,Fumio Koyama,Tomoyuki Miyamoto","Photoluminescence characteristics of InAs quantum dots with GaInP cover layer grown by metalorganic chemical vapor deposition",,"Jpn. J. Appl. Phys.",,"vol. 48","no. 7R","pp. 070203-1-3",2009,July
"Ryoichiro Suzuki,Tomoyuki Miyamoto,Tomoyuki Sengoku,Kosuke Nemoto,Satouru Tanabe,Fumio Koyama","Photoluminescence Characteristics of MOCVD Grown-InAs Quantum Dots Covered by GaInP Laye","2009 International Conference on Indium Phosphide and Related Materials, IPRM2009",,,"  WB1-7",,"pp. 234-237",2009,May
"Satoru Tanabe,Ryoichiro Suzuki,Tomoyuki Sengoku,Kosuke Nemoto,Tomoyuki Miyamoto","InAs QDs on thin GaP<small><sub>1-x</sub></small>N<small><sub>x</sub></small> buffer on GaP by MOCVD","2009 International Conference on Indium Phosphide and Related Materials (IPRM2009)",,,,,,2009,May
"仙石知行,宮本智之,鈴木亮一郎,根本幸祐,田辺 悟,小山二三夫","MOCVD法によるGaInNAsバッファ層上InAs量子ドットの高密度化","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"田辺 悟,鈴木亮一郎,仙石知行,根本幸祐,小山二三夫,宮本智之","GaPNバッファ層を用いたGaP基板上InAs 量子ドット成長","第56回応用物理学関連連合講演会",,,,,,2009,Mar.
"仙石知行,鈴木亮一郎,根本幸祐,田辺悟,小山二三夫,宮本智之","GaInPカバー層を用いたInAs量子ドットの発光特性","第69回応用物理学会学術講演会",,,,,,2008,Sept.