"来山大祐,久保田透,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","[ 183]	D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, “Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer”, Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011",,"Japanese Journal of Applied Physics",,"Vol. 50","No. 10","pp. 10PA05-1-5",2011,Oct.
"来山大祐,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effect of thin Si insertion at metal gate/high-k interface on electrical characteristics of MOS device with La2 O3",,"Microelectronic Engineering",,"Vol. 88","No. 7","pp. 1330-1333",2011,July
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,来山大祐,金田翼,鈴木 拓也,Tomotsune Koyanagi,Miyuki Kouda,マイマイティ マイマイティレャアティ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"来山大祐,久保田 透,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Precise Control of Silicate Reaction with La2O3 Gate Dielectrics towards Equivalent Oxide Thickness of 0.5 nm","Taiwan-Japan Workshop on “Nano Devices”",,,,,,2011,
"Ahmet Parhat,来山大祐,金田 翼,鈴木  拓也,Tomotsune Koyanagi,Miyuki Kouda,M. Mamatrishat,Takamasa Kawanago,Kuniyuki KAKUSHIMA,HIROSHI IWAI","Scaling of EOT Beyond 0.5nm","ICSICT(International Conference on Solid-State and Integrated Circuit Technology)2010",,,,,,2010,Nov.
"D. Kitayama,T. Koyanagi,K. Kakushima,P. Ahmet,K. Tsutsui,A. Nishiyama,N. Sugii,K. Natori,T. Hattori,H. Iwai","TiN Capping Effect on High Temperature Annealed RE-Oxide Devices for Scaled EOT","218th ECS Meeting",,,,,,2010,Oct.
"Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Impact of Alkali-Earth-Elements Incorporation on Vfb R0ll-Off Characteristics of La2O3  Gated MOS Device","ECS 218th Meeting",,,,,,2010,Oct.
"来山大祐,Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN Capping Effect on High Temperature Annealed RE-Oxide MOS Capacitors for Scaled EOT","ECS 218th Meeting",,,,,,2010,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of rare earth silicates for highly scaled gate dielectrics",,"Microelectronic Engineering",,"Vol. 87","No. 10","pp. 1868-1871",2010,Oct.
"来山大祐,小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","高温短時間熱処理を用いた希土類MOSキャパシタへのTiNキャップ効果","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"角嶋邦之,小柳友常,来山大祐,幸田みゆき,宋在烈,佐藤創志,川那子高暢,M. マイマイティ,舘喜一,M.K. Bera,パールハットアヘメト,野平博司,筒井一生,西山彰,杉井信之,名取研二,服部健雄,山田啓作,岩井洋","LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御","応用物理学会分科会 シリコンテクノロジー","，野平博司，筒井一生，西山彰，杉井信之，名取研二，服部健雄，山田啓作，岩井洋“LaCe シリケート膜を用いたEOT<0.7nm の直接接合 high-k/Si の実現とフラットバンド電圧制御” 応用物理学会分科会 シリコンテクノロジー No.127 pp.4-8（2010年7月22日 ）",,,"No. 127","pp. 4-8",2010,July
"来山大祐,小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","EOT=0.5nmに向けた希土類MOSデバイスの高温短時間熱処理の検討",,"電子情報通信学会技術研究報告 pp.43-48",,,,,2010,June
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,来山大祐,Miyuki Kouda,Jaeyeol Song,Takamasa Kawanago,M. Mamatrishat,Kiichi Tachi,M. K. Bera,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,Keisaku Yamada,HIROSHI IWAI","Direct Contact of High-k/Si Gate Stack for EOT below 0.7 nm using LaCe-silicate Layer with Vfb controllability","2010 Symposium on VLSI Technology",,,,,,2010,June
"来山 大祐,小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","来山大祐，小柳友常，角嶋邦之，パールハット アヘメト，筒井一生，西山彰，杉井信之，名取研二，服部健雄，岩井洋“EOT=0.5nm に向けたTaSi2/La2O3/CeOxゲートスタック構造の検討","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-094",2010,Mar.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Miyuki Kouda,Kiichi Tachi,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,Hiroshi Nohira,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","SrO capping effect for La2O3/ Ce-Silicate gate dielectrics",,"Microelectronics Reliability 50",,,,"pp. 356-359",2010,Mar.
"小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","La2O3 MOSデバイスへのアルカリ土類元素キャップによる電気特性の変化","第57回応用物理学関係連合講演会","第57回応用物理学関係連合講演会講演予稿集",,,,"pp. 13-098",2010,Mar.
"Kuniyuki KAKUSHIMA,Tomotsune Koyanagi,Kiichi Tachi,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric",,"Solid-State Electronics",,"Vol. 54",,"pp. 720-723",2010,
"来山大祐,小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Process Optimization of Rare-Earth Oxides Gated MOS Devices for Future EOT Scaling","複合創造領域シンポジウム",,,,,,2010,
"小柳友常,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","Flatband Voltage Shift of La-based Gate Oxides with Alkali-earth-elements Incorporation","複合創造領域シンポジウム",,,,,,2010,
"Tomotsune Koyanagi,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,西山彰,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Influence of Alkali Earth Elements Capping on Electrical Characteristics of La2O3 Gated MOS Device","G-COE PICE International Symposium on Silicon Nano Devices",,,,,,2009,Oct.
"Tomotsune Koyanagi,Koichi Okamoto,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,AKIRA NISHIYAMA,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Impact of Alkali Earth Elements Incorporation on Electrical Characteristics of La2O3 Gated MOS Device","ECS 216th Meeting",,,"vol. 25","No. 6","pp. 17-22",2009,Oct.
"Kuniyuki KAKUSHIMA,Koichi Okamoto,Tomotsune Koyanagi,Kiichi Tachi,Miyuki Kouda,Takamasa Kawanago,Jaeyeol Song,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Selection of Rare Earth Silicate with SrO Capping for EOT Scaling below o.5 nm","ESSDERC 2009, 39th European Solid-State Device Research Conference",,,,,"p. 403",2009,Sept.
"小柳友常,岡本晃一,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","La2O3MOSデバイスへのSrO導入による電気特性の変化","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集","応用物理学会",,"No. 2","pp. 854",2009,Mar.
"Tomotsune Koyanagi,Kiichi Tachi,Koichi Okamoto,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,Nobuyuki Sugii,takeo hattori,HIROSHI IWAI","Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation",,"Japanese Journal of Applied Physics",,"Vol. 48",,,2009,
"小柳友常,岡本晃一,角嶋邦之,パールハットアヘメト,杉井信之,筒井一生,服部健雄,岩井洋","La203系MOSFETへのMg挿入による電気特性の変化","秋季第69回応用物理学会学術講演会","秋季第69回応用物理学会学術講演会予稿集","応用物理学会",,"No. 2","pp. 702",2008,Sept.