"早坂 明泰,青沼 遼介,堀田 航史,金井 七重,眞壁 勇夫,吉田 成輝,宮本 恭幸","N極性GaN HEMT作製プロセスにおけるプラズマダメージの低減","第80回 応用物理学会 秋季学術講演会",,,,,"  18p-N302-11",2019,Sept.
"A. Hayasaka,R. Aonuma,K. Hotta,I. Makabe,S. Yoshida,Y. Miyamoto","N-polar GaN HEMT with Al2O3 gate insulator","Compound Semiconductor Week 2019",,,,,"  MoP-G-8 (Poster)",2019,May
"早坂 明泰,青沼 遼介,堀田 航史,眞壁 勇夫,吉田 成輝,宮本 恭幸","Al2O3ゲート絶縁膜を持つN極性GaN HEMT","第66回応用物理学会春季学術講演会",,,,,"  9p-M121-13",2019,Mar.
"R. Aonuma,N. Kise,Y. Miyamoto","GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV/dec at room temperature",,"Jpn. J. Appl. Phys.",,,,"  58, SBBA08 (2019)",2019,Mar.
"Y. Miyamoto,N. Kise,R. Aonuma","GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters","2018 Workshop on Innovative Nanoscale Devices and Systems (WINDS)",,,,,"  P7",2018,Nov.
"青沼 遼介,木瀬 信和,宮本 恭幸","Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善","第79回応用物理学会秋季学術講演会",,,,,"  21p-331-7",2018,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  PS-1-14",2018,Sept.
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,,"  We3C3.2",2018,May
"金澤 徹,大澤 一斗,雨宮 智宏,木瀬 信和,青沼 遼介,宮本 恭幸","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,,"  18a-G203-3",,,2018,Mar.
"木瀬 信和,青沼 遼介,宮本 恭幸","GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響","第65回応用物理学会春季学術講演会",,,,,"  18p-C302-12",2018,Mar.
"木瀬 信和,岩田 真次郎,青沼 遼介,宮本 恭幸","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"岩田 真次郎,木瀬 信和,青沼 遼介,宮本 恭幸","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"青沼遼介,岩田真次郎,木瀬信和,宮本恭幸","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,,"  EDD-17-051",2017,Mar.