"Y. Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,K. Ohsawa","Regrown Source/Drain in InGaAs Multi-Gate MOSFETs",,"J. Crystal Growth",,"vol. 522",,"  （2019）11-15",2019,Sept.
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,,"  P2-32",2018,June
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,,"  We3C3.2",2018,May
"金澤 徹,大澤 一斗,雨宮 智宏,木瀬 信和,青沼 遼介,宮本 恭幸","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,,"  18a-G203-3",,,2018,Mar.
"?澤 ??,?澤 徹,?瀬 信和,?宮 智宏,宮本 恭幸","InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S22-2",,2017,Sept.
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"大澤 一斗,野口 真司,祢津 誠晃,木瀬 信和,宮本 恭幸","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"大澤一斗,野口真司,祢津誠晃,木瀬信和,宮本恭幸","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.
"大澤 一斗,木瀬 信和,宮本 恭幸","15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
"K. Ohsawa,N. Kise,Y. Miyamoto","Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks","2016 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"K. Ohsawa,Y. Mishima,Y. Miyamoto","Operation of 13-nm channel length InGaAs-MOSFET with n-InP source","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"大澤 一斗,三嶋 裕一,宮本 恭幸","InGaAs-MOSFETのチャネル長微細化に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,T. Irisawa,M. Oda,T. Tezuka","(Invited) Growth Process for High Performance of InGaAs MOSFETs","72nd Device Research Conference (DRC)",,,,,,2014,June
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"大澤一斗,加藤淳,佐賀井健,金澤徹,上原英治,宮本恭幸","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"佐賀井 健,上原 英治,大澤 一斗,宮本 恭幸","n-InP ソースを持つT ケ?ート構造 InGaAs-MOSFET の高周波特性","2013年電子情報通信学会総合大会",,,,,,2013,Mar.