"Ryo Wakabayashi,Kohei Yoshimatsu,Mai Hattori,Jung-Soo Lee,Osami Sakata,Akira Ohtomo","Epitaxial Stabilization of Complete Solid-solution β-(AlxGa1?x)2O3 (100) Films by Pulsed-laser Deposition",,"Cryst. Growth Des.",,"Vol. 21","No. 5","Page 2844-2849",2021,Apr. "Takumi Saito,Ryo Wakabayashi,Jung-Soo Lee,Kaisei Kamei,Kohei Yoshimatsu,Motohisa Kado,Akira Ohtomo","Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer","CSW2019",,,,,,2019,May "Jung-Soo Lee,Ryo Wakabayashi,Takumi Saito,Kohei Yoshimatsu,Motohisa Kado,Akira Ohtomo","High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma","CSW2019",,,,,,2019,May "李 政洙,若林 諒,斉藤 拓海,吉松 公平,加渡Kado,大友 明","PLD法による窒素ドープ酸化ガリウム薄膜の成長と電気特性評価","第66回応用物理学会春季学術講演会",,,,,,2019,Mar. "若林諒","酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究",,,,,,,2019,Mar. "若林諒","酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究",,,,,,,2019,Mar. "若林諒","酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究",,,,,,,2019,Mar. "若林諒","酸化ガリウム系混晶の薄膜成長とヘテロ接合界面の物性評価に関する研究",,,,,,,2019,Mar. "斉藤 拓海,若林 諒,李 政洙,亀井 海聖,吉松 公平,加渡Kado,大友 明","半絶縁性中間層によるβ-Ga2O3ホモエピタキシャル層の界面伝導の抑制","第66回応用物理学会春季学術講演会",,,,,,2019,Mar. "若林 諒,吉松 公平,大友 明","PLD法によるβ-(Ga1-yScy)2O3薄膜成長とバンドギャップ変調","2018年第79回応用物理学会秋季学術講演会",,,,,,2018,Sept. "Ryo Wakabayashi,Mai Hattori,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo","Band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 (100) interface fabricated",,"Applied Physics Letters",,"Vol. 112",,,2018,June "李政洙,若林諒,吉松 公平,大友 明","ウェットエチングを用いたβ-Ga2O3(100)基板表面のSi不純物除去","第65回応用物理学会春季学術講演会",,,,,,2018,Mar. "服部真依,若林諒,佐々木公平,増井建和,倉又朗人,山腰茂伸,堀場弘司,組頭広志,吉松公平,大友明","β-Ga203(100)上に成長したβ-(AlxGal-x)203薄膜のバンドギャップ評価","第64回応用物理学会春季学術講演会",,,,,,2018,Mar. "若林 諒,吉松 公平,大友 明","新規ワイドギャップ混晶半導体β-(Ga1-yScy)2O3","第65回応用物理学会春季学術講演会",,,,,,2018,Mar. "Ryo Wakabayashi,K. Yoshimatsu,Mai Hattori,A. Ohtomo","Epitaxial structure and electronic property of?β-Ga2O3?films grown on MgO (100) substrates by pulsed-laser deposition",,"Applied Physics Letters","AIP Publishing","Vol. 111",," 162101",2017,Oct. "若林諒,服部真依,吉松 公平,大友 明","全Al組成β -(Alx Ga1-x )2O3 (0 ? x ? 1)薄膜のエピタキシャル成?","第78回応用物理学会春季学術講演会",,,,,,2017,Sept. "R. Wakabayashi,M. Hattori,K. Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,A. Ohtomo","Growth of β-Ga2O3 -based heterostructures by pulsed-laser deposition","2nd International Workshop on Gallium Oxide and Related Materials",,,,,,2017,Sept. "若林諒,吉松公平,大友明","MgO(100)基板上のβ-Ga203:Si(100)薄膜の低温成長","第64回応用物理学会春季学術講演会",,,,,,2017,Mar. "T. Oshima,R. Wakabayashi,M. Hattori,Akihiro Hashiguchi,Naoto Kawano,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo,Toshiyuki Oishi,Makoto Kasu","Formation of indium?tin oxide ohmic contacts for β-Ga2O3",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","Vol. 55","No. 1202B7",,2016,Oct. "Mai Hattori,Takayoshi OSHIMA,Ryo Wakabayashi,K. Yoshimatsu,Kohei Sasaki,Takekazu Masui,Akito Kuramata,Shigenobu Yamakoshi,Koji Horiba,Hiroshi Kumigashira,A. Ohtomo","Epitaxial growth and electric properties of γ-Al2O3 (110) films on β- Ga2O3 (010) substrates",,"Japanese Journal of Applied Physics","IOP publishing","Vol. 55","No. 12"," 1202B6",2016,Oct. "大島孝仁,若林諒,服部真依,橋口 明広,河野 直士,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,吉松 公平,大友 明","β-Ga2O3用ITOオーミック電極","第77回応用物理学会春季学術講演会",,,,,,2016,Sept. "T. Oshima,R. Wakabayashi,M. Hattori,Akihiro Hashiguchi,Naoto Kawano,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo,Toshiyuki Oishi,Makoto Kasu","ITO ohmic contacts for β-Ga2O3","German-Japanese Gallium Oxide Technical Meeting 2016",,,,,,2016,Sept. "R. Wakabayashi,K. Yoshimatsu,A. Ohtomo","Low-temperature growth of β-Ga2O3:Si (100) films on MgO (100) substrates","German-Japanese Gallium Oxide Technology Meeting 2016",,,,,,2016,Sept. "R. Wakabayashi,T. Oshima,M. Hattori,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Strong Fermi-Level Pinning at Metal/β-Ga2O3 (?201) Interface","The 1st International Workshop on Gallium Oxide and Related Materials",,,,,,2015,Nov. "M. Hattori,R. Wakabayashi,T. Oshima,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Evaluation of Band Offset at β-(AlxGa1-x)2O3/β-Ga2O3 Heterointerface","The 1st International Workshop on Gallium Oxide and Related Materials",,,,,,2015,Nov. "M. Hattori,T. Oshima,R. Wakabayashi,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Epitaxial Relationship and Capacitance-Voltage Characteristicsof γ-Al2O3 Films Grown on (010) β-Ga2O3 Substrates","The 1st International Workshop on Gallium Oxide and Related Materials",,,,,,2015,Nov. "R. Wakabayashi,T. Oshima,M. Hattori,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Growth and Electric Properties of Conductive β-(AlxGa1-x)2O3 Films","The 1st International Workshop on Gallium Oxide and Related Materials",,,,,,2015,Nov. "服部 真依,大島 孝仁,若林 諒,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,吉松 公平,大友 明","β-Ga2O3上γ-Al2O3膜のエピタキシャル構造と容量電圧特性評価","第76回応用物理学会秋季学術講演会",,,,,,2015,Sept. "若林 諒,大島 孝仁,服部 真依,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,吉松 公平,大友 明","金属/β-Ga2O3 (?201)界面における強いフェルミ準位ピンニング効果","第76回応用物理学会秋季学術講演会",,,,,,2015,Sept. "若林 諒,大島 孝仁,服部 真依,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,吉松 公平,大友 明","酸素ラジカル支援パルスレーザ堆積法による酸化ガリウム系混晶薄膜の成長","第34回電子材料シンポジウム",,,,,,2015,July "大島 孝仁,服部 真依,若林 諒,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,堀場 弘司,組頭 広志,吉松 公平,大友 明","β-(AlxGa1-x)2O3/β-Ga2O3ヘテロ接合におけるタイプI型バンドラインナップ","第34回電子材料シンポジウム",,,,,,2015,July "R. Wakabayashi,T. Oshima,M. Hattori,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 films",,"Journal of Crystal Growth","Elsevier","Vol. 424",,"pp. 77-79",2015,May "若林 諒,服部 真依,大島 孝仁,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,吉松 公平,大友 明","酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長","第62回応用物理学会春季学術講演会",,,,,,2015,Mar. "服部 真依,若林 諒,大島 孝仁,佐々木 公平,増井 建和,倉又 朗人,山腰 茂伸,堀場 弘司,組頭 広志,吉松 公平,大友 明","β-(AlxGa1-x)2O3/β-Ga2O3/ヘテロ接合のバンドオフセット評価","第62回応用物理学会春季学術講演会",,,,,,2015,Mar. "R. Wakabayashi,M. Hattori,T. Oshima,A. Mukai,K. Sasaki,T. Masui,A. Kuramata,S. Yamakoshi,K. Yoshimatsu,A. Ohtomo","Oxygen-radical-assisted pulsed-laser deposition of β-(AlxGa1-x)2O3 alloy films","The 1st E-MRS/MRS-J Bilateral Symposia -Materials Frontier for Transparent Advanced Electronic",,,,,,2014,Dec.