"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Hiroshi Nohira,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,"Solid-State Electronics",,"Vol. 82",,"pp. 29-33",2013,Apr.
"Yuya Suzuki,ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Interface Engineering of La2O3/InGaAs Capacitors with High Temperature Stability","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Hiroshi Oomine,ダリューシュザデ,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","La-Oxide Gate Dielectrics for InGaAs Substrates formed by Chemical Vapor Deposition","Workshop and IEEE EDS Mini-colloquium on Nanometer CMOS Technology (WIMNACT 37)",,,,,,2013,
"Ryuji Hosoi,Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,杉井信之,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"Yuya Suzuki,ダリューシュザデ,Ryuji Hosoi,Kuniyuki KAKUSHIMA,パールハットアヘメト,KAZUO TSUTSUI,Akira Nishiyama,Nobuyuki Sugii,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical characteristics of La2O3/In0.53Ga0.47AAs capacitors with surface nitridation","15th International Conference on Thin Films",,,,,,2013,
"DARYOUSH ZADEH,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,西山彰,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of metal Schottky junction for InGaAs substrate","G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists",,,,,,2013,
"DARYOUSH ZADEH,Hiroshi Oomine,Yuya Suzuki,Kuniyuki KAKUSHIMA,Hiroshi Nohira,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","La2O3/Ino.53Ga.0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate alectrode",,,,,,,2013,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Characterization of matal Schottky junction for In0.53Ga0.47AAs substrates","CSTIC 2012",,,,,,2012,
"DARYOUSH ZADEH,Ryuji Hosoi,Yuya Suzuki,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Electrical Characterization and improvement of high-k/InGaAs devices","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Ryuji Hosoi,Yuya Suzuki,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,パールハットアヘメト,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","A novel interpretation of frequency dispersed capacitances in InGaAs capacitor by conductance method","IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT",,,,,,2012,
"Kuniyuki KAKUSHIMA,Yuya Suzuki,ダリューシュザデ,Takamasa Kawanago,HIROSHI IWAI","Development of Core Technologies for Green Nanoelectronics","International Symposium on “Development of Core Technologies for Green Nanoelectronics”",,,,,,2012,
"Yuya Suzuki,ダリューシュザデ,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,KAZUO TSUTSUI,Kenji Natori,takeo hattori,HIROSHI IWAI","Effect of In0.53Ga0.47AAs surface nitridation on electrical characteristics of high-k/capacitors","ECS 222nd Meeting","ECS Transactions",,"Vol. 50","No. 4","pp. 145-150",2012,
"鈴木佑哉,細井隆司,ダリューシュザデ,角嶋邦之,パールハットアヘメト,筒井一生,西山彰,杉井信之,名取研二,服部健雄,岩井洋","high-k/In0.53Ga0.47As MOS キャパシタの容量-電圧特性の解析","第72回応用物理学会学術講演会",,,,,,2011,