"A. Yukimachi,Y. Miyamoto","InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope",,"Jpn. J. Appl. Phys.",,"vol. 55","  118004",,2016,Oct.
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Experimental approach for feasibility of superlattice FETs","2016 Lester Eastman Conference (LEC)",,,,,"pp. 8-11",2016,Aug.
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,,"  TuD4-2",,2016,June
"行待 篤志,宮本 恭幸","超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード","第76回応用物理学会秋季学術講演会",,,,,"  16a-4C-3",2015,Sept.
"Y. Miyamoto,M. Fujimatsu,K. Ohashi,A. Yukimachi,S. Iwata","Steep subthreshold slope in InGaAs MOSFET","SemiconNano2015",,,,,,2015,Sept.
"行待 篤志,柏野 壮志,宮本 恭幸","超格子FETに向けたダブルバリアp-i-n接合ダイオード","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"宮本恭幸,行待篤志","超格子ソースによるスティープスロープFETの可能性","電子情報通信学会 総合大会",,,,,,2015,Mar.
"柏野壮志,行待篤志,宮本恭幸","急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.