"宮本恭幸,金澤 徹,米内義晴,加藤 淳,藤松基彦,柏野壮志,大澤一斗,大橋一水","低電圧/高速動作にむけたInGaAs MOSFETソース構造","電子情報通信学会 電子デバイス研究会","IEICE Technical Report",,,,,2014,Aug.
"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,M. Fujimatsu,M. Kashiwano,K. Ohsawa,K. Ohashi","(Invited) InGaAs MOSFET Source Structures Toward High Speed/low Power Applications","26th International Conference on InP and Related Materials (IPRM 2014)",,,,,,2014,May
"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"大澤一斗,加藤淳,佐賀井健,金澤徹,上原英治,宮本恭幸","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第 60 回応用物理学会春季学術講演会",,,,,,2013,Mar.
"加藤淳,米内義晴,金澤徹,宮本恭幸","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第73 回応用物理学会学術講演会",,,,,,2012,Sept.
"Atsushi Kato,Toru Kanazawa,Shunsuke Ikeda,Yosiharu Yonai,Yasuyuki Miyamoto","Reduction of access resistance of InP/InGaAs composite-channel MOSFET with back source electrode",,"IEICE Trans. Electron.",,"vol. E95-C","no. 5","pp. 904-919",2012,May
"加藤淳,金澤徹,宮本恭幸","ソース裏面電極によるInP/InGaAsコンポジットチャネルMOSFETのアクセス抵抗低減","電子情報通信学会2011年ソサイエティ大会",,,,,,2011,Sept.
"A. Kato,T. Kanazawa,S. Ikeda,Y. Yonai,YASUYUKI MIYAMOTO","Reduction of Access Resistance of InP/InGaAs Composite-Channel MOSFET with A Back Source Electrode","2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD)",,,,,,2011,Sept.
"R. Terao,T. Kanazawa,S. Ikeda,Y. Yonai,A. Kato,Y. Miyamoto","InP/InGaAs Composite MOSFETs with Regrown Source and Al2O3 gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm",,"Applied Phys. Exp.","The Japan Society of Applied Physics","vol. 4","no. 5","  054201",2011,Apr.
"金澤 徹,寺尾 良輔,山口 裕太郎,池田 俊介,米内 義晴,加藤 淳,宮本 恭幸","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"金澤徹,寺尾良輔,山口裕太郎,池田俊介,米内義晴,加藤淳,宮本恭幸","Si基板上貼付された裏面電極付InP/InGaAs MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"寺尾良輔,金澤徹,池田俊介,米内義晴,加藤淳,宮本恭幸","Al2O3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.