"Eisuke Tokumitsu,Gwang-Geun Lee","Switching properties of ferroelectric P(VDF-TrFE) films fabricated on oxide electrodes","E-MRS 2012, Spring Meeting",,,,,,2012,May
"Lee Gwang Geun,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low voltage operation of ferroelectric thin film transistors using P(VDF-TrFE) and IGZO","第７２回応用物理学会学術講演会",,,,,,2011,Aug.
"Gwang-Geun Lee,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Express",,"Vol. 4",,"pp. 091103-1-3",2011,Aug.
"Gwang-Geun Lee,Eisuke Tokumitsu,Sung-Min Yoon,Yosihisa Fujisaki,Joo-Won Yoon,Hiroshi Ishiwara","The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)",,"Applied Physics Letters",,"Vol. 99",,"pp. 012901-1-3",2011,July
"G.-G. Lee,S.-M. Yoon,J.-W. Yoon,Y. Fujisaki,H. Ishiwara,E. Tokumitsu","Flexible Ferroelectric-TFTs Using IGZO-Channel and P(VDF-TrFE)","The 17th International Display Workshops(IDW’10)",,,,,,2010,Dec.
"GwangGeun Lee,Sung-ming Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of Organic P(VDF-TrFE) Film on PEN Substrate for Flexible IGZO-channel Ferroelectric-gate TFTs","2010 fall meeting, Materials Research Society",,,,,,2010,Nov.
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Flexible non-volatile memory TFT with IGZO-channel and ferroelectric polymer","第７１回応用物理学会学術講演会",,,,,,2010,Sept.
"Sung-Min Yoon,Shin-Hyuk Yang,Soon-Won Jung,Chun-Won Byun,Sang-Hee Ko Park,Chi-Sun Hwang,Gwang-Geun Lee,Eisuke Tokumitsu,Hiroshi Ishiwara","Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor",,"Applied Physics Letters",,,"No. 96","  232903 1-3",2010,May
"Gwang-Geun Lee,Sung-Min Yoon,Joo-Won Yoon,藤崎芳久,石原宏,徳光永輔","有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価",,"信学技報、SDM2010-16、OME2010-16(2010-04)","社団法人電子情報通信学会","Vol. 110","No. 15","pp. 71-75",2010,Apr.
"GwangGeun Lee,Sung-ming Yoon,JooWon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Fabrication of IGZO-channel Ferroelectric-gate TFTs with Organic P(VDF-TrFE) Film","2009 fall meeting, Materials Research Society",,,,,,2009,Nov.
"Lee Gwang Geun,Hoowon Yoon,Yosihisa Fujisaki,Hiroshi Ishiwara,Eisuke Tokumitsu","Ferroelectric Behaviors of P(VDF-TrFE) Thin Films on Transparent ITO Electrode","第70回 応用物理学会学術講演会","第70回 応用物理学会学術講演会",,,"  11p-L-2",,2009,Sept.