"E.Tokumitsu,Y.Takano,H.Shibata,H.Saiki","Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlOx buffer layer",,"Journal of Microelectronic Engineering",,"Vol. 84",,"pp. 2018-2021",2007,June "Eisuke Tokumitsu,Syahhibul Azwar,Hirokazu Saiki","Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structures with Sol-Gel Derived (Sm,Sr)Bi2Ta2O9 Films","19th International Symposium of Intergrated Ferroelectrics(ISIF2007)",,,,,"pp. 5-166P",2007,May "Eisuke Tokumitsu,Hirokazu Saiki","Characterization of Read-Out Drain Current Degradation in Ferroelectric-Gate Transistors","19th International Symposium of Intergrated Ferroelectrics(ISIF2007)",,,,,"pp. 1-143P",2007,May "Ö–Ø”Ž˜a","‹­—U“d‘̃Q[ƒg“dŠEŒø‰Êƒgƒ‰ƒ“ƒWƒXƒ^—pV‹KÞ—¿EƒfƒoƒCƒX\‘¢‚ÉŠÖ‚·‚錤‹†",,,,,,,2007,Mar. "‚–ì —Fˆê,Ö–Ø”Ž˜a,ŽÄ“cG,“¿Œõ‰i•ã","‹à‘®^≑Ì^‹­—U“d‘Ì^≑Ì^”¼“±‘Ì\‘¢iM-I-FIS\‘¢jƒLƒƒƒpƒVƒ^‚Ì컂ƕ]‰¿","‘æ54‰ñ‰ž—p•¨—ŠwŠÖŒW˜A‡u‰‰‰ï",,,,"No. 29a-SV-4",,2007,Mar. "Hirokazu Saiki,Eisuke Tokumitsu","Data Retention and Readout Degradation Propertics of Pt/Sr0.7Sm0.07Bi2.2Ta2O9/HfO2/Si Structure Ferroelectric-Gate Field Effect Transistors",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 1","pp. 261-266",2007,Jan. "Hirokazu Saiki,Syahhibul Azwar,Eisuke Tokumitsu","Fabrication of SBT-based Ferroelectric Thin Films for Low Voltage Operation of Ferroelectric-gate FET",,"Transactions of the Materials Research Society of Japan",,"Vol. 31[1]",,"pp. 197-200",2006,Jan. "Hirokazu Saiki,Eisuke Tokumitsu","Ferroelectric Sprit-Gate-Feild-Effect-Transistors for Nonvolatile Memory Cell Array",,"IEICE Transactions on Electronics",,"Vol. E87-C","No. 10","pp. 1700-1705",2004,Oct. "Hirokazu Saiki,Eisuke Tokumitsu","Characterization of Metal-Ferroelectric-Metal Insulator-Semiconductor(MFMIS) FETs Using (Sr,Sm)0.8Bi2.2O9(SSBT) Thin Films","Materials Research Society Symp.","Materials Research Society Symp. Proc.",,"Vol. 784",,"pp. 485-490",2004,July