"‰Z�¶“µ”ü,’·”ö�r—C,•½ŽR”Ž”V,’†’ÒŠ°","(In,Bi)/Si(111)•\–Ê‚ÌŒ´Žq�\‘¢","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"’·”ö�r—C,‘å“à‘ñŽÀ,‰Z�¶“µ”ü,�D“c�F�K,”Ñ�·‘ñŽk,�¬�X•¶•v,’†’ÒŠ°,•½ŽR”Ž”V","Si(111)�ã3�~�ã3-Ag •\–Ê�ã‚ÌBi(110)’´”––Œ‚Ì“dŽq�ó‘Ô","“ú–{•¨—�Šw‰ï2023”N�t‹G‘å‰ï",,,,,,2023,Mar.
"�XˆäŽµ�¶,‰i—FŒc,’|‘º�Wˆê,‘å“à‘ñŽÀ,‰Z�¶“µ”ü,’·”ö�r—C,‰Í“Y—�‰›,”Ñ�·‘ñŽk,�¬�X•¶•v,•½ŽR”Ž”V,’†’ÒŠ°","Cu(001)c(4�~2)-Bi•\–Ê‚Ì“dŽq�ó‘Ô","2021”N“ú–{•\–Ê�^‹óŠw‰ïŠw�p�u‰‰‰ï",,,,,,2021,Nov.
"N. Morii,K. Nagatomo,K. Takemura,T. Ouchi,H. Uryu,S. Nagao,R. Kawazoe,T. Iimori,F. Komori,H. Hirayama,K. Nakatsuji","Electronic structure of Cu(001)c(4�~2)-Bi surface","13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC�f21)",,,,,,2021,Oct.