"Shiro Hino,Tomohiro Hatayama,Jun Kato,Naruhisa Miura,Tatsuo Oomori,Eisuke Tokumitsu","Anomalously High Channel Mobility in SiC MOSFET with Al2O3/SiOx/SiC Gate Structure","ICSCRM2007","Materials Science Forum",,"vol. 600-603",,"pp. 683-686",2009,Feb.
"S.Hino,Tomohiro Hatayama,J.Kato,E.Tokumitsu,N.Miura,T.Oomori","High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator",,"Applied Physics Letters",,"Vol. 92","No. 183503","pp. 1-2",2008,June
"S.Hino,Tomohiro Hatayama,J.Kato,N. Miura,T.Oomori,E.Tokumitsu","Anomalously High Channel Mobility in SiC-MOSFETs with Al2O3/SiOx/SiC Gate Structure","International Conference on Silicon Barbide and Related Materials 2007",,,,"No. We-2A-2",,2007,Oct.
"加藤潤,日野史郎,三浦 成久,大森 達夫,徳光永輔","低温堆積Al2O3を用いたSiC MOSFETのアニールによる電気的特性の変化","第６８回 応用物理学関係連合講演会","第６８回 応用物理学関係連合講演会",,,"No. 6p-ZN-10/I",,2007,Sept.
"日野史郎,畑山 智裕,加藤潤,守谷仁,三浦 成久,大森 達夫,徳光永輔","極薄膜酸化膜を用いたAl2O3/SiC MOSFETのチャネル移動度の向上（?）","第６８回 応用物理学会学術講演会","第６８回 応用物理学会学術講演会",,,"No. 6p-ZN-9/?",,2007,Sept.
"畑山 智裕,日野史郎,加藤潤,徳光永輔,三浦 成久,大森 達夫","極薄酸化膜を用いたAl2O3/SiC-MOSFETのチャネル移動度の向上","第54回応用物理学関係連合講演会",,,,"No. 29a-N-3",,2007,Mar.
"日野史郎,畑山 智裕,加藤潤,徳光永輔,三浦 成久,大森 達夫","Al2O3/SiC-MOSFETトランジスタ特性のAl2O3堆積温度依存性","第54回応用物理学関係連合講演会",,,,"No. 29a-N-4",,2007,Mar.