"山下 明矩,星名 豊,山田 明","不純物濃度低減を目指したInGaP上伸張歪Ge薄膜の成長と評価","応用物理学会 2012 春季",,,,,,2013,
"Yutaka Hoshina,Kotaro Tadokoro,Akinori Yamashita,Yasuyoshi Kurokawa,Akira Yamada","Tensile-Strained Ge as a Novel Absorber Material for Solar Cell Applications","International Symposium on Innovative Solar Cells 2012",,,,,,2012,Mar.
"Yutaka Hoshina,Masayuki Shimizu,Akira Yamada,Makoto Konagai","Numerical Analysis of a Solar Cell with Tensile-Strained Ge as a Novel Narrow-Band-Gap Absorber",,"JAPANESE JOURNAL OF APPLIED PHYSICS",,"Vol. 50","No. 4 SI","pp. 04DP08-1~04DP08-6",2011,Apr.
"Akira Yamada,Yutaka Hoshina,Masayuki Shimizu,Kotaro Tadokoro,Yasuyoshi Kurokawa","Strained-Ge thin film solar cells ? Theory and growth ?","International Symposium on Innovative Solar Cells 2010",,,,,,2010,Oct.
"Yutaka Hoshina,Masayuki Shimizu,Kotaro Tadokoro,Akira Yamada,Makoto Konagai","Theoretical and Experimental Study on Tensile-Strained Ge as a Novel Narrow Band Gap Absorber in Multijunction Solar Cells","Korea-Japan Top University League Workshop on Photovoltaics 2010 (Top-PV2010)",,,,,,2010,
"星名 豊,清水正幸,山田 明,小長井誠","高光吸収係数を有する伸長歪Geを用いた太陽電池構造の理論解析","第57回春季応用物理学関連連合講演会",,,,,,2010,
"清水正幸,星名 豊,山田 明,小長井誠","太陽電池応用を目指した伸張歪Ge薄膜の物性評価","第71回応用物理学会学術講演会",,,,,,2010,
"Yutaka Hoshina,Makoto Konagai","GROWTH AND CHARACTERIZATION OF TRANSITION-TYPE-CONTROLLED TENSILE-STRAINED GERMANIUM AS A NOBLE NARROW BAND GAP ABSORBER","19th International Photovoltaic Science and Engineering Conference and Exhibition",,,,,,2009,Nov.
"Yutaka Hoshina,Kojiro Iwasaki,AKIRA YAMADA,MAKOTO KONAGAI","First-Principles Analysis of Indirect-to-Direct Band Gap Transition of Ge under Tensile Strain",,"Jpn. J. Appl. Phys.",,"Vol. 48",,"  04C125-1-04C125-6",2009,Aug.
"Y.Hoshina,K.Iwasaki,Akira Yamada,M.Konagai","Growth and characterization of strain-induced Ge as a novel low bandgapabsorber","International Symposium on Innovative Solar Cells 2009",,,,,,2009,Mar.
"岩崎康二郎,星名 豊,隅田 洋,山田 明,小長井誠","InxGa1-xAs仮想基板を用いた伸張歪Geの作製と評価","2009年春季 第56回応用物理学関係連合講演会",,,,,,2009,Mar.
"MAKOTO KONAGAI,AKIRA YAMADA,Yutaka Hoshina","Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy",,"Japanese Journal of Applied Physics",,"Vol. 48",,"pp. 111102(4 pages)",2009,
"Yutaka Hoshina,Kojiro Iwasaki,Akira Yamada,Makoto Konagai","First-principles Analysis of Indirect-to-Direct Band Gap Transition of Ge Under Tensile Strain","International Conference on Solid State Devices and Materials (SSDM2008)",,,,,,2008,Sept.
"星名 豊,山田 明,小長井 誠","第一原理計算による歪印加Geの遷移型変化に関する解析","2008年春季 第55回応用物理学関係連合講演会",,,,,,2008,Mar.