"大石敏之,山口裕太郎,大塚浩志,山中宏治,野上洋一,福本宏,宮本恭幸","GaNショットキーバリアダイオードの温度依存性モデル","第61回春季応用物理学会学術講演会",,,,,,2014,Mar.
"山口裕太郎,大石敏之,大塚浩志,山中宏治,TeoKoonHoo,宮本恭幸","GaN HEMTの過渡応答バイアス依存性によるトラップ解析","第61回春季応用物理学会学術講演会",,,,,,2014,Mar.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,K. Yamanaka,Y. Miyamoto","Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"林 一夫,大石 敏之,加茂 宣卓,山口 裕太郎,大塚 浩志,山中 宏治,中山 正敏,宮本 恭幸","AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析",,"電子情報通信学会論文誌. C, エレクトロニクス",,"Vol. J96-C","No. 8","pp. 200-208",2013,
"K. Hayashi,Y. Yamaguchi,T. Oishi,H. Ostuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,T. Nanjo,K. Yamanaka,M. Nakayama,Y. Miyamoto","Simulation study and reduction of reverse gate leakage current for GaN HEMTs",,,,,,,2012,Oct.
"T. Oishi,K. Hayashi,Y. Yamaguchi,H. Otsuka,K.  Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"大石敏之,林一夫,佐々木肇,山口裕太郎,大塚浩志,山中宏治,中山正敏,宮本恭幸","トランシ?スタ動作時における GaN HEMT ケ?ートリークのテ?ハ?イスシミュレーションによる解析","電子情報通信学会2012年ソサエティ大会",,,,,,2012,Sept.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation","2012 International Conference on. Solid State Devices and Materials (SSDM 2012)",,,,,,2012,Sept.
"山口裕太郎,大石敏之,大塚浩志,山中宏治,南條拓真,中山正敏,平野嘉仁,宮本恭幸","デバイスシミュレーションによるGaN HEMTのゲートリークの解析","電子情報通信学会2011年総合大会",,,,,,2012,Mar.
"Y. Yamaguchi,T. Sagai,Y. Miyamoto","Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process","9th Topical Workshop on Heterostructure Materials",,,,,,2011,Sept.
"山口裕太郎,佐賀井健,宮本恭幸","基板転写プロセスを用いたSi基板上InP/InGaAs SHBTの作製","第58回応用物理学会関係連合講演会",,,,,,2011,Apr.
"金澤 徹,寺尾 良輔,山口 裕太郎,池田 俊介,米内 義晴,加藤 淳,宮本 恭幸","裏面電極を有する???族量子井戸型チャネルMOSFET","電子情報通信学会電子デバイス研究会",,,,,,2011,Jan.
"金澤徹,寺尾良輔,山口裕太郎,池田俊介,米内義晴,加藤淳,宮本恭幸","Si基板上貼付された裏面電極付InP/InGaAs MOSFET","第71回応用物理学会学術講演会",,,,,,2010,Sept.
"Toru Kanazawa,Ryousuke Terao,Yuutarou Yamaguchi,Shunsuke Ikeda,Yosiharu Yonai,YASUYUKI MIYAMOTO","InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer","2010 International Conference on Solid State Devices and Materials",,,,,"pp. 129-130",2010,Sept.
"磯谷優治,小林 嵩,山口裕太郎,宮本恭幸,古屋一仁","Si基板上へ転写したInP系HBTの動作","第57回応用物理学関係連合研究会",,,,,,2010,Mar.