"K. Ohsawa,A. Kato,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with InP source for high current density",,"IEICE Electronics Express",,"vol. 11","No. 14","pp. 1-5",2014,July
"Y. Mishima,T. Kanazawa,H. Kinoshita,E. Uehara,Y. Miyamoto","InGaAs tri-gate MOSFETs with MOVPE regrown source/drain","72nd Device Research Conference (DRC)",,,,,,2014,June
"Yuichi Mishima,Toru Kanazawa,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsチャネルトライゲートMOSFET","第61回春季応用 物理学会学術講演会",,,,,,2014,Mar.
"Toru Kanazawa,Yuichi Mishima,Haruki Kinoshita,Eiji Uehara,YASUYUKI MIYAMOTO","MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET","電子情報通信学 会 電子デバイス研究会","IEICE technical report",,,,,2014,Jan.