"J. Yaita,T.Suto,M. Natal,S. E. Saddow,M. Hatano,T. Iwasaki","In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates",,"Diamond & Related Materials",,"Vol. 88",,"pp. 158-162",2018,Sept.
"Junya Yaita,Takayuki Iwasaki,Mutsuko Hatano","Heteroepitaxy of diamond on SiC",,"Power Electronics Device Applications of Diamond Semiconductors","Woodhead Publishing",,,"pp. 81-97",2018,July
"Takuya Murooka,Junya Yaita,Takayuki Iwasaki,牧野 俊晴,小 倉 政彦,加藤 宙光,Natal Meralys,Saddow Stephen E.,山崎 聡,Mutsuko Hatano","3C-SiC/Si 基板上に形成したヘテロエピタキシャルダイ ヤモンドSBD の電気特性","第65回応用物理学会 春季学術講演会",,,,,,2018,Mar.
"Haruka Hoshino,Junya Yaita,Takayuki Iwasaki,Mutsuko Hatano","ヘテロエピタキシャル核形成プロセスにおけるバイアス 電流のモニタリング","第65回応用物理学会 春季学術講演会",,,,,,2018,Mar.
"J. Yaita,T. Tsuji,M. Hatano,T. Iwasaki","Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers",,"Appl. Phys. Express",,"Vol. 11",,"pp. 045501.1〜4",2018,Mar.
"Junya Yaita","Study of diamond heteroepitaxy on Si substrates for power and sensor devices",,,,,,,2018,Mar.
"Junya Yaita","Study of diamond heteroepitaxy on Si substrates for power and sensor devices",,,,,,,2018,Mar.
"Junya Yaita","Study of diamond heteroepitaxy on Si substrates for power and sensor devices",,,,,,,2018,Mar.